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TLE2022AMP

更新时间： 2024-11-18 22:42:07
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
66页 1096K
描述
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS

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TLE2022AMP 技术参数

生命周期：Obsolete零件包装代码：DIP
包装说明：PLASTIC, DIP-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.23
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.09 µA
25C 时的最大偏置电流 (IIB)：0.07 µA最小共模抑制比：93 dB
标称共模抑制比：109 dB频率补偿：YES
最大输入失调电压：450 µVJESD-30 代码：R-PDIP-T8
长度：9.59 mm低-失调：YES
微功率：YES负供电电压上限：-20 V
标称负供电电压 (Vsup)：-15 V功能数量：2
端子数量：8最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
电源：+-2/+-20/4/40 V认证状态：Not Qualified
座面最大高度：5.08 mm最小摆率：0.4 V/us
标称压摆率：0.65 V/us子类别：Operational Amplifier
最大压摆率：0.6 mA供电电压上限：20 V
标称供电电压 (Vsup)：15 V表面贴装：NO
技术：BIPOLAR温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL标称均一增益带宽：2800 kHz
最小电压增益：1000000宽度：7.62 mm
Base Number Matches：1

TLE2022AMP 数据手册

 浏览型号TLE2022AMP的Datasheet PDF文件第2页浏览型号TLE2022AMP的Datasheet PDF文件第3页浏览型号TLE2022AMP的Datasheet PDF文件第4页浏览型号TLE2022AMP的Datasheet PDF文件第5页浏览型号TLE2022AMP的Datasheet PDF文件第6页浏览型号TLE2022AMP的Datasheet PDF文件第7页 
TLE202x, TLE202xA, TLE202xB, TLE202xY  
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION  
OPERATIONAL AMPLIFIERS  
SLOS191 – FEBRUARY 1997  
Supply Current . . . 230 µA Max  
High Open-Loop Gain . . . 6.5 V/µV  
(136 dB) Typ  
High Unity-Gain Bandwidth . . . 2 MHz Typ  
High Slew Rate . . . 0.45 V/µs Min  
Low Offset Voltage . . . 100 µV Max  
Offset Voltage Drift With Time  
0.005 µV/mo Typ  
Supply-Current Change Over Military Temp  
Range . . . 10 µA Typ at V = ± 15 V  
CC ±  
Low Input Bias Current . . . 50 nA Max  
Low Noise Voltage . . . 19 nV/√Hz Typ  
Specified for Both 5-V Single-Supply and  
±15-V Operation  
Phase-Reversal Protection  
description  
The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers  
using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with  
highly improved slew rate and unity-gain bandwidth.  
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic  
improvement in unity-gain bandwidth and slew rate over similar devices.  
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both  
time and temperature. This means that a precision device remains a precision device even with changes in  
temperature and over years of use.  
This combination of excellent dc performance with a common-mode input voltage range that includes the  
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either  
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry  
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply  
rail.  
A variety of available options includes small-outline and chip-carrier versions for high-density systems  
applications.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of –55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...66

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