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TLE2021AQDRG4Q1 PDF预览

TLE2021AQDRG4Q1

更新时间: 2024-11-23 03:38:39
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
39页 724K
描述
EXCALIBUR HIGH-SPEED LOW-POWER PRECISION POERATIONAL AMPLIFIERS

TLE2021AQDRG4Q1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:1.23
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.07 µA
25C 时的最大偏置电流 (IIB):0.07 µA最小共模抑制比:85 dB
标称共模抑制比:110 dB频率补偿:YES
最大输入失调电流 (IIO):0.006 µA最大输入失调电压:200 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm低-偏置:NO
低-失调:YES微功率:YES
湿度敏感等级:1负供电电压上限:-20 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:+-2/+-20/4/40 V
可编程功率:NO认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:1.75 mm
最小摆率:0.4 V/us标称压摆率:0.5 V/us
子类别:Operational Amplifier最大压摆率:0.23 mA
供电电压上限:20 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:1700 kHz最小电压增益:100000
宽带:NO宽度:3.91 mm
Base Number Matches:1

TLE2021AQDRG4Q1 数据手册

 浏览型号TLE2021AQDRG4Q1的Datasheet PDF文件第2页浏览型号TLE2021AQDRG4Q1的Datasheet PDF文件第3页浏览型号TLE2021AQDRG4Q1的Datasheet PDF文件第4页浏览型号TLE2021AQDRG4Q1的Datasheet PDF文件第5页浏览型号TLE2021AQDRG4Q1的Datasheet PDF文件第6页浏览型号TLE2021AQDRG4Q1的Datasheet PDF文件第7页 
ꢀ ꢁꢂ ꢃ ꢄ ꢃ ꢅ ꢆꢇꢈ ꢉ ꢀ ꢁꢂ ꢃꢄ ꢃꢅ ꢊꢆ ꢇ ꢈ  
ꢂꢋ ꢌꢊꢁ ꢍꢎꢏ ꢐ ꢑꢍ ꢒꢑ ꢆꢓꢔꢂ ꢂꢕ ꢁ ꢖꢗꢆꢔꢖ ꢗ ꢂꢐ ꢔꢐ ꢂꢌ ꢍ ꢓꢍ ꢖ ꢘ  
ꢖ ꢔꢂꢐ ꢊꢀ ꢍꢖ ꢘꢊꢁ ꢊꢙ ꢔ ꢁꢍ ꢚꢍ ꢂꢐ ꢓ  
SGLS199A − JANUARY 2004 − REVISED APRIL 2004  
D
Qualification in Accordance With  
AEC-Q100  
D
D
Supply-Current Change Over Full Temp  
Range . . . 10 µA Typ at V 15 V  
Specified for Both 5-V Single-Supply and  
15-V Operation  
=
CC  
D
Qualified for Automotive Applications  
D
Customer-Specific Configuration Control  
Can Be Supported Along With  
Major-Change Approval  
D
Phase-Reversal Protection  
D
High Open-Loop Gain . . . 6.5 V/µV  
(136 dB) Typ  
D
ESD Protection Exceeds 1000 V Per  
MIL-STD-883, Method 3015; Exceeds 200 V  
Using Machine Model (C = 200 pF, R = 0)  
D
D
Low Offset Voltage . . . 100 µV Max  
Offset Voltage Drift With Time  
0.005 µV/mo Typ  
Low Input Bias Current . . . 50 nA Max  
D
D
D
Supply Current . . . 300 µA Max  
High Unity-Gain Bandwidth . . . 2 MHz Typ  
D
High Slew Rate . . . 0.45 V/µs Min  
D
Low Noise Voltage . . . 19 nV/Hz Typ  
Contact factory for details. Q100 qualification data available on  
request.  
description  
The TLE202x and TLE202xA devices are precision, high-speed, low-power operational amplifiers using a new  
Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly  
improved slew rate and unity-gain bandwidth.  
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic  
improvement in unity-gain bandwidth and slew rate over similar devices.  
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both  
time and temperature. This means that a precision device remains a precision device even with changes in  
temperature and over years of use.  
This combination of excellent dc performance with a common-mode input voltage range that includes the  
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either  
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry  
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply  
rail.  
A variety of available options includes small-outline versions for high-density systems applications.  
The Q-suffix devices are characterized for operation over the full automotive temperature range of −40°C to  
125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢀꢧ  
Copyright 2004, Texas Instruments Incorporated  
ꢣ ꢧ ꢤ ꢣꢜ ꢝꢰ ꢟꢞ ꢢ ꢪꢪ ꢨꢢ ꢠ ꢢ ꢡ ꢧ ꢣ ꢧ ꢠ ꢤ ꢬ  
ꢥꢧ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TLE2021AQDRG4Q1 替代型号

型号 品牌 替代类型 描述 数据表
TLE2021AQDRQ1 TI

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