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TLC27M9MDR PDF预览

TLC27M9MDR

更新时间： 2024-11-29 13:14:47
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
37页 556K
描述
QUAD OP-AMP, 3750uV OFFSET-MAX, 0.525MHz BAND WIDTH, PDSO14, SOIC-14

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TLC27M9MDR 技术参数

生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP14,.3针数：14
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.67
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.035 µA最小共模抑制比：65 dB
标称共模抑制比：91 dB频率补偿：YES
最大输入失调电压：3750 µVJESD-30 代码：R-PDSO-G14
长度：8.65 mm低-偏置：YES
低-失调：NO微功率：YES
功能数量：4端子数量：14
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP14,.3封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TAPE AND REEL
电源：5/10 V认证状态：Not Qualified
座面最大高度：1.75 mm标称压摆率：0.4 V/us
子类别：Operational Amplifiers最大压摆率：1.8 mA
供电电压上限：18 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：MILITARY端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
标称均一增益带宽：525 kHz最小电压增益：25000
宽度：3.9 mmBase Number Matches：1

TLC27M9MDR 数据手册

 浏览型号TLC27M9MDR的Datasheet PDF文件第2页浏览型号TLC27M9MDR的Datasheet PDF文件第3页浏览型号TLC27M9MDR的Datasheet PDF文件第4页浏览型号TLC27M9MDR的Datasheet PDF文件第5页浏览型号TLC27M9MDR的Datasheet PDF文件第6页浏览型号TLC27M9MDR的Datasheet PDF文件第7页 
TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9  
LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS  
SLOS093C – OCTOBER 1987 – REVISED MAY 1999  
D, J, N, OR PW PACKAGE  
(TOP VIEW)  
Trimmed Offset Voltage:  
TLC27M9 . . . 900 µV Max at T = 25°C,  
A
V
= 5 V  
DD  
1OUT  
1IN–  
1IN+  
4OUT  
4IN–  
4IN+  
GND  
3IN+  
3IN–  
3OUT  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
V
DD  
2IN+  
2IN–  
–40°C to 85°C . . . 4 V to 16 V  
–55°C to 125°C . . . 4 V to 16 V  
2OUT  
8
Single-Supply Operation  
FK PACKAGE  
(TOP VIEW)  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix,  
I-Suffix Types)  
Low Noise . . . Typically 32 nV/√Hz  
at f = 1 kHz  
3
2
1
20 19  
18  
4IN+  
1IN+  
NC  
4
5
6
7
8
NC  
17  
16  
15  
14  
Low Power . . . Typically 2.1 mW at  
GND  
NC  
V
T = 25°C, V  
= 5 V  
DD  
A
DD  
NC  
Output Voltage Range Includes Negative  
Rail  
3IN+  
2IN+  
9 10 11 12 13  
12  
High Input Impedance . . . 10 Ω Typ  
ESD-Protection Circuitry  
Small-Outline Package Option Also  
Available in Tape and Reel  
NC – No internal connection  
Designed-In Latch-Up Immunity  
DISTRIBUTION OF TLC27M9  
INPUT OFFSET VOLTAGE  
description  
40  
35  
30  
25  
20  
15  
10  
5
301 Units Tested From 2 Wafer Lots  
The TLC27M4 and TLC27M9 quad operational  
amplifiers combine a wide range of input offset  
voltage grades with low offset voltage drift, high  
input impedance, low noise, and speeds  
comparable to that of general-purpose bipolar  
devices.These devices use Texas Instruments  
V
T
A
= 5 V  
DD  
= 25°C  
N Package  
silicon-gate LinCMOS  
technology, which  
provides offset voltage stability far exceeding the  
stability available with conventional metal-gate  
processes.  
The extremely high input impedance, low bias  
currents, make these cost-effective devices ideal  
for applications that have previously been  
reserved for general-purpose bipolar products,  
but with only a fraction of the power consumption.  
0
–1200  
–600  
0
600  
1200  
V
IO  
– Input Offset Voltage – µV  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...37

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