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TLC27L2BIDR PDF预览

TLC27L2BIDR

更新时间: 2024-10-30 12:02:35
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
49页 1467K
描述
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

TLC27L2BIDR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:6 weeks
风险等级:0.91放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.00006 µA
25C 时的最大偏置电流 (IIB):0.00006 µA最小共模抑制比:65 dB
标称共模抑制比:94 dB频率补偿:YES
最大输入失调电流 (IIO):0.00006 µA最大输入失调电压:2000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.9 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1功能数量:2
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:4/16 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:0.02 V/us
标称压摆率:0.03 V/us子类别:Operational Amplifier
最大压摆率:0.034 mA供电电压上限:18 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:85 kHz
最小电压增益:50000宽带:NO
宽度:3.91 mmBase Number Matches:1

TLC27L2BIDR 数据手册

 浏览型号TLC27L2BIDR的Datasheet PDF文件第2页浏览型号TLC27L2BIDR的Datasheet PDF文件第3页浏览型号TLC27L2BIDR的Datasheet PDF文件第4页浏览型号TLC27L2BIDR的Datasheet PDF文件第5页浏览型号TLC27L2BIDR的Datasheet PDF文件第6页浏览型号TLC27L2BIDR的Datasheet PDF文件第7页 
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  
SLOS052D − OCTOBER 1987 − REVISED OCTOBER 2005  
D, JG, OR P PACKAGE  
(TOP VIEW)  
D
Trimmed Offset Voltage:  
TLC27L7 . . . 500 µV Max at 25°C,  
= 5 V  
V
DD  
1OUT  
1IN−  
1IN+  
GND  
V
DD  
1
2
3
4
8
7
6
5
D
D
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
2OUT  
2IN−  
2IN+  
FK PACKAGE  
(TOP VIEW)  
−40°C to 85°C . . . 4 V to 16 V  
−55°C to 125°C . . . 4 V to 16 V  
D
D
Single-Supply Operation  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix,  
I-Suffix Types)  
3
2
1
20 19  
18  
NC  
NC  
4
5
6
7
8
2OUT  
NC  
1IN−  
NC  
17  
16  
15  
14  
D
D
Ultra-Low Power . . . Typically 95 µW  
at 25°C, V  
= 5 V  
DD  
2IN−  
NC  
1IN+  
NC  
Output Voltage Range Includes Negative  
Rail  
9 10 11 12 13  
12  
D
D
D
High Input Impedance . . . 10 Typ  
ESD-Protection Circuitry  
Small-Outline Package Option Also  
Available in Tape and Reel  
NC − No internal connection  
D
Designed-In Latch-Up immunity  
DISTRIBUTION OF TLC27L7  
INPUT OFFSET VOLTAGE  
description  
30  
25  
20  
15  
10  
5
335 Units Tested From 2 Wafer Lots  
The TLC27L2 and TLC27L7 dual operational  
V
T
A
= 5 V  
DD  
= 25°C  
P Package  
amplifiers combine a wide range of input offset  
voltage grades with low offset voltage drift, high  
input impedance, extremely low power, and high  
gain.  
AVAILABLE OPTIONS  
PACKAGE  
V
max  
SMALL  
OUTLINE  
(D)  
CHIP  
CARRIER  
(FK)  
CERAMIC  
DIP  
(JG)  
PLASTIC  
DIP  
IO  
T
A
AT 25°C  
(P)  
500 µV TLC27L7CD  
2 mV TLC27L2BCD  
5 mV TLC27L2ACD  
10 mV TLC27L2CD  
TLC27L7CP  
0°C  
to  
70°C  
TLC27L2BCP  
TLC27L2ACP  
TLC27L2CP  
0
800  
400  
0
400  
800  
V
IO  
− Input Offset Voltage − µV  
500 µV TLC27L7ID  
2 mV TLC27L2BID  
5 mV TLC27L2AID  
10 mV TLC27L2ID  
TLC27L7IP  
TLC27L2BIP  
TLC27L2AIP  
TLC27L2IP  
40°C  
to  
85°C  
55°C  
to  
125°C  
TLC27L7MD  
500 µV  
TLC27L7MFK TLC27L7MJG TLC27L7MP  
TLC27L2MFK TLC27L2MJG TLC27L2MP  
TLC27L2MD  
10 mV  
TLC27L2MDRG4  
The D package is available taped and reeled. Add R suffix to the device type  
(e.g., TLC27L7CDR).  
LinCMOS is a trademark of Texas Instruments.  
ꢀꢞ  
Copyright 2005, Texas Instruments Incorporated  
ꢚ ꢞ ꢛ ꢚꢈ ꢉꢨ ꢖꢕ ꢙ ꢡꢡ ꢟꢙ ꢗ ꢙ ꢘ ꢞ ꢚ ꢞ ꢗ ꢛ ꢣ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TLC27L2BIDR 替代型号

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