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TLC27L1BCP PDF预览

TLC27L1BCP

更新时间： 2024-10-28 22:31:55
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
32页 518K
描述
LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS

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TLC27L1BCP 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：DIP包装说明：PLASTIC, DIP-8
针数：8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.62Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.00006 µA25C 时的最大偏置电流 (IIB)：0.00006 µA
标称共模抑制比：94 dB频率补偿：YES
最大输入失调电压：3000 µVJESD-30 代码：R-PDIP-T8
JESD-609代码：e4长度：9.81 mm
低-偏置：YES低-失调：NO
微功率：YES功能数量：1
端子数量：8最高工作温度：70 °C
最低工作温度：封装主体材料：PLASTIC/EPOXY
封装代码：DIP封装等效代码：DIP8,.3
封装形状：RECTANGULAR封装形式：IN-LINE
包装方法：TUBE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5/10 V认证状态：Not Qualified
座面最大高度：5.08 mm标称压摆率：0.03 V/us
子类别：Operational Amplifier最大压摆率：0.033 mA
供电电压上限：18 V标称供电电压 (Vsup)：5 V
表面贴装：NO技术：CMOS
温度等级：COMMERCIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：85 kHz最小电压增益：50000
宽度：7.62 mmBase Number Matches：1

TLC27L1BCP 数据手册

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TLC27L1, TLC27L1A, TLC27L1B  
LinCMOS LOW-POWER  
OPERATIONAL AMPLIFIERS  
SLOS154 – DECEMBER 1995  
Input Offset Voltage Drift . . . Typically  
Low Noise . . . 68 nV/√Hz Typically at  
0.1 µV/Month, Including the First 30 Days  
f = 1 kHz  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
Output Voltage Range includes Negative  
Rail  
12  
High Input Impedance . . . 10 Ω Typ  
–40°C to 85°C . . . 4 V to 16 V  
–55°C to 125°C . . . 5 V to 16 V  
ESD-Protection Circuitry  
Small-Outline Package Option Also  
Available in Tape and Reel  
Single-Supply Operation  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix  
and I-Suffix Types)  
Designed-In Latch-Up Immunity  
description  
The TLC27L1 operational amplifier combines a wide range of input offset-voltage grades with low offset-voltage  
drift and high input impedance. In addition, the TLC27L1 is a low-bias version of the TLC271 programmable  
amplifier. These devices use the Texas Instruments silicon-gate LinCMOS technology, which provides  
offset-voltage stability far exceeding the stability available with conventional metal-gate processes.  
Three offset-voltage grades are available (C-suffix and I-suffix types), ranging from the low-cost TLC27L1 (10  
mV) to the TLC27L1B (2 mV) low-offset version. The extremely high input impedance and low bias currents,  
in conjunction with good common-mode rejection and supply voltage rejection, make these devices a good  
choice for new state-of-the-art designs as well as for upgrading existing designs.  
Ingeneral, manyfeaturesassociatedwithbipolartechnologyareavailableinLinCMOS operationalamplifiers,  
without the power penalties of bipolar technology. General applications such as transducer interfacing, analog  
calculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC27L1. The  
devices also exhibit low-voltage single-supply operation, making them ideally suited for remote and  
inaccessible battery-powered applications. The common-mode input-voltage range includes the negative rail.  
The device inputs and output are designed to withstand –100-mA surge currents without sustaining latch-up.  
The TLC27L1 incorporates internal electrostatic-discharge (ESD) protection circuits that prevent functional  
failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.2; however, care should be  
exercised in handling these devices as exposure to ESD may result in the degradation of the device parametric  
performance.  
AVAILABLE OPTIONS  
PACKAGE  
D OR P PACKAGE  
V
max  
IO  
SMALL  
OUTLINE  
(D)  
PLASTIC  
DIP  
(TOP VIEW)  
T
A
AT 25°C  
(P)  
OFFSET N1  
IN –  
V
V
OUT  
1
2
3
4
8
7
6
5
DD  
DD  
2 mV  
5 mV  
TLC27L1BCD  
TLC27L1ACD  
TLC27L1CD  
TLC27L1BCP  
TLC27L1ACP  
TLC27L1CP  
0°C to 70°C  
IN +  
GND  
10 mV  
OFFSET N2  
2 mV  
5 mV  
10 mV  
TLC27L1BID  
TLC27L1AID  
TLC27L1ID  
TLC27L1BIP  
TLC27L1AIP  
TLC27L1IP  
–40°C to 85°C  
–55°C to 125°C  
10 mV  
TLC27L1MD  
TLC27L1MP  
The D package is available taped and reeled. Add R suffix to the device type  
(e.g., TLC27L1BCDR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1995, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...32

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与TLC27L1BCP相关器件

型号 品牌 获取价格 描述 数据表
TLC27L1BI DIODES

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TLC27L1BID TI

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 		LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS
TLC27L1BIDG4 TI

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 		OP-AMP, 3500uV OFFSET-MAX, 0.085MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, SOIC-8
TLC27L1BIP TI

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 		LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS
TLC27L1BIP ROCHESTER

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 		OP-AMP, 3500uV OFFSET-MAX, 0.085MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8
TLC27L1BIPE4 TI

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 		OP-AMP, 3500uV OFFSET-MAX, 0.085MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8
TLC27L1BIS-13 DIODES

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 		Operational Amplifier, 1 Func, 3500uV Offset-Max, CMOS, PDSO8, GREEN, SOP-8
TLC27L1C DIODES

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TLC27L1CD TI

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 		LinCMOSE LOW-POWER OPERATIONAL AMPLIFIERS
TLC27L1CD ROCHESTER

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 		OP-AMP, 12000 uV OFFSET-MAX, 0.085 MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8

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