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TLC279CDG4 PDF预览

TLC279CDG4

更新时间: 2024-11-24 12:00:47
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
53页 1622K
描述
The TLC274 and TLC279 quad operational amplifiers combine a wide range of input offset voltage grades with low offset voltage drift, high...

TLC279CDG4 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-14针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:6 weeks
风险等级:5.1Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.00006 µA25C 时的最大偏置电流 (IIB):0.00006 µA
最小共模抑制比:65 dB标称共模抑制比:80 dB
频率补偿:YES最大输入失调电流 (IIO):0.00006 µA
最大输入失调电压:900 µVJESD-30 代码:R-PDSO-G14
JESD-609代码:e4长度:8.65 mm
低-偏置:YES低-失调:NO
微功率:NO湿度敏感等级:1
功能数量:4端子数量:14
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP14,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TUBE
峰值回流温度(摄氏度):260功率:NO
电源:3/16 V可编程功率:NO
认证状态:Not Qualified座面最大高度:1.75 mm
标称压摆率:3.6 V/us子类别:Operational Amplifier
最大压摆率:1.6 mA供电电压上限:18 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:320 kHz
最小电压增益:5000宽带:NO
宽度:3.91 mmBase Number Matches:1

TLC279CDG4 数据手册

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SLOS092D − SEPTEMBER 1987 − REVISED MARCH 2001  
D
Trimmed Offset Voltage:  
TLC279 . . . 900 µV Max at 25°C,  
= 5 V  
D, J, N, OR PW PACKAGE  
(TOP VIEW)  
V
DD  
D
D
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
−40°C to 85°C . . . 4 V to 16 V  
−55°C to 125°C . . . 4 V to 16 V  
Single-Supply Operation  
1OUT  
1IN−  
1IN+  
4OUT  
13 4IN−  
1
2
3
4
5
6
7
14  
12  
11  
10  
9
4IN+  
GND  
3IN+  
3IN−  
3OUT  
V
DD  
2IN+  
2IN−  
8
2OUT  
D
D
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix  
and I-Suffix Versions)  
FK PACKAGE  
(TOP VIEW)  
D
D
D
D
D
Low Noise . . . Typically 25 nV/Hz  
at f = 1 kHz  
3
2
1
20 19  
18  
Output Voltage Range Includes Negative  
Rail  
4IN+  
NC  
1IN+  
NC  
4
5
6
7
8
17  
16  
15  
14  
12  
High Input Impedance . . . 10 Typ  
GND  
NC  
V
DD  
NC  
ESD-Protection Circuitry  
3IN+  
2IN+  
Small-Outline Package Option Also  
Available in Tape and Reel  
9 10 11 12 13  
D
Designed-In Latch-Up Immunity  
description  
NC − No internal connection  
The TLC274 and TLC279 quad operational  
amplifiers combine a wide range of input offset  
voltage grades with low offset voltage drift, high  
input impedance, low noise, and speeds  
approaching that of general-purpose BiFET  
devices.  
DISTRIBUTION OF TLC279  
INPUT OFFSET VOLTAGE  
30  
25  
20  
15  
10  
5
290 Units Tested From 2 Wafer Lots  
= 5 V  
V
T
A
DD  
= 25°C  
These devices use Texas Instruments silicon-  
gate LinCMOStechnology, which provides  
offset voltage stability far exceeding the stability  
N Package  
available  
with  
conventional  
metal-gate  
processes.  
The extremely high input impedance, low bias  
currents, and high slew rates make these  
cost-effective devices ideal for applications which  
have previously been reserved for BiFET and  
NFET products. Four offset voltage grades are  
available (C-suffix and I-suffix types), ranging  
from the low-cost TLC274 (10 mV) to the high-  
precision TLC279 (900 µV). These advantages, in  
combination with good common-mode rejection  
and supply voltage rejection, make these devices  
a good choice for new state-of-the-art designs as  
well as for upgrading existing designs.  
0
1200  
600  
0
600  
1200  
V
IO  
− Input Offset Voltage − µV  
LinCMOS is a trademark of Texas Instruments.  
ꢀꢢ  
Copyright 2001, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TLC279CDG4 替代型号

型号 品牌 替代类型 描述 数据表
TLC279IDR TI

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TLC279CD TI

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TLC279IDR TI

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TLC279IDR ROCHESTER

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