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TLC277MJGB PDF预览

TLC277MJGB

更新时间： 2024-11-20 12:15:47
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
51页 1485K
描述
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

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TLC277MJGB 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIP
包装说明：CERAMIC, DIP-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.1
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.00006 µA25C 时的最大偏置电流 (IIB)：0.00006 µA
标称共模抑制比：80 dB频率补偿：YES
最大输入失调电压：3750 µVJESD-30 代码：R-GDIP-T8
长度：9.58 mm低-偏置：YES
低-失调：NO微功率：NO
功能数量：2端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
功率：NO电源：4/16 V
可编程功率：NO认证状态：Not Qualified
筛选级别：38535Q/M;38534H;883B座面最大高度：5.08 mm
标称压摆率：2.9 V/us子类别：Operational Amplifier
最大压摆率：5 mA供电电压上限：18 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：1700 kHz最小电压增益：3500
宽带：NO宽度：7.62 mm
Base Number Matches：1

TLC277MJGB 数据手册

 浏览型号TLC277MJGB的Datasheet PDF文件第2页浏览型号TLC277MJGB的Datasheet PDF文件第3页浏览型号TLC277MJGB的Datasheet PDF文件第4页浏览型号TLC277MJGB的Datasheet PDF文件第5页浏览型号TLC277MJGB的Datasheet PDF文件第6页浏览型号TLC277MJGB的Datasheet PDF文件第7页 
TLC272, TLC272A, TLC272B, TLC272Y, TLC277  
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS  
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002  
D, JG, P, OR PW PACKAGE  
(TOP VIEW)  
D
Trimmed Offset Voltage:  
TLC277 . . . 500 µV Max at 25°C,  
= 5 V  
V
DD  
1OUT  
1IN–  
1IN+  
GND  
V
DD  
1
2
3
4
8
7
6
5
D
D
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
2OUT  
2IN–  
2IN+  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
–40°C to 85°C . . . 4 V to 16 V  
–55°C to 125°C . . . 4 V to 16 V  
FK PACKAGE  
(TOP VIEW)  
D
D
Single-Supply Operation  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix,  
I-Suffix types)  
3
2
1
20 19  
18  
D
D
D
D
D
Low Noise . . . Typically 25 nV/√Hz at  
f = 1 kHz  
NC  
NC  
4
5
6
7
8
2OUT  
NC  
1IN–  
NC  
17  
16  
15  
14  
Output Voltage Range Includes Negative  
Rail  
2IN–  
NC  
1IN+  
NC  
12  
High Input impedance . . . 10 Ω Typ  
9 10 11 12 13  
ESD-Protection Circuitry  
Small-Outline Package Option Also  
Available in Tape and Reel  
D
Designed-In Latch-Up Immunity  
NC – No internal connection  
description  
The TLC272 and TLC277 precision dual  
DISTRIBUTION OF TLC277  
INPUT OFFSET VOLTAGE  
operational amplifiers combine a wide range of  
input offset voltage grades with low offset voltage  
drift, high input impedance, low noise, and speeds  
approaching those of general-purpose BiFET  
devices.  
30  
25  
20  
15  
10  
473 Units Tested From 2 Wafer Lots  
= 5 V  
DD  
= 25°C  
V
T
A
P Package  
These devices use Texas Instruments silicon-  
gate LinCMOS  
technology, which provides  
offset voltage stability far exceeding the stability  
available with conventional metal-gate pro-  
cesses.  
The extremely high input impedance, low bias  
currents, and high slew rates make these cost-  
effective devices ideal for applications previously  
reserved for BiFET and NFET products. Four  
offset voltage grades are available (C-suffix and  
I-suffix types), ranging from the low-cost TLC272  
(10 mV) to the high-precision TLC277 (500 µV).  
These advantages, in combination with good  
common-mode rejection and supply voltage  
rejection, make these devices a good choice for  
new state-of-the-art designs as well as for  
upgrading existing designs.  
5
0
–800  
–400  
0
400  
800  
V
IO  
– Input Offset Voltage – µV  
LinCMOS is a trademark of Texas Instruments.  
Copyright 2002, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...51

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