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TLC277MD

更新时间： 2024-09-12 22:53:03
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
36页 587K
描述
LinCMOSE PRECISION DUAL OPERATIONAL AMPLIFIERS

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中文翻译

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TLC277MD 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOIC包装说明：SO-8
针数：8Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.72放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.00006 µA
最小共模抑制比：65 dB标称共模抑制比：80 dB
频率补偿：YES最大输入失调电压：3750 µV
JESD-30 代码：R-PDSO-G8长度：4.9 mm
低-偏置：YES低-失调：NO
微功率：NO功能数量：2
端子数量：8最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED功率：NO
电源：5/10 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.75 mm
标称压摆率：3.6 V/us子类别：Operational Amplifier
供电电压上限：18 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：MILITARY端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：1700 kHz
最小电压增益：10000宽带：NO
宽度：3.9 mmBase Number Matches：1

TLC277MD 数据手册

 浏览型号TLC277MD的Datasheet PDF文件第2页浏览型号TLC277MD的Datasheet PDF文件第3页浏览型号TLC277MD的Datasheet PDF文件第4页浏览型号TLC277MD的Datasheet PDF文件第5页浏览型号TLC277MD的Datasheet PDF文件第6页浏览型号TLC277MD的Datasheet PDF文件第7页 
TLC272, TLC272A, TLC272B, TLC272Y, TLC277  
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS  
SLOS091B – OCTOBER 1987 – REVISED AUGUST 1994  
D, JG, P, OR PW PACKAGE  
(TOP VIEW)  
Trimmed Offset Voltage:  
TLC277 . . . 500 µV Max at 25°C,  
= 5 V  
V
DD  
1OUT  
1IN–  
1IN+  
GND  
V
DD  
1
2
3
4
8
7
6
5
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
2OUT  
2IN–  
2IN+  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
FK PACKAGE  
(TOP VIEW)  
–40°C to 85°C . . . 4 V to 16 V  
–55°C to 125°C . . . 4 V to 16 V  
Single-Supply Operation  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix,  
I-Suffix types)  
3
2
1
20 19  
18  
NC  
NC  
4
5
6
7
8
2OUT  
NC  
1IN–  
NC  
17  
16  
15  
14  
Low Noise . . . Typically 25 nV/√Hz at  
f = 1 kHz  
2IN–  
NC  
1IN+  
NC  
Output Voltage Range Includes Negative  
Rail  
9 10 11 12 13  
12  
High Input impedance . . . 10 Ω Typ  
ESD-Protection Circuitry  
Small-Outline Package Option Also  
Available in Tape and Reel  
NC – No internal connection  
DISTRIBUTION OF TLC277  
INPUT OFFSET VOLTAGE  
Designed-in Latch-Up Immunity  
30  
25  
20  
15  
10  
description  
473 Units Tested From 2 Wafer Lots  
= 5 V  
DD  
= 25°C  
V
T
The TLC272 and TLC277 precision dual  
operational amplifiers combine a wide range of  
input offset voltage grades with low offset voltage  
drift, high input impedance, low noise, and speeds  
approaching that of general-purpose BiFET  
devices.  
A
P Package  
These devices use Texas instrumentssilicon-gate  
LinCMOS technology, which provides offset  
voltage stability far exceeding the stability  
available with conventional metal-gate pro-  
cesses.  
5
The extremely high input impedance, low bias  
currents, and high slew rates make these cost-  
effective devices ideal for applications which have  
previously been reserved for BiFET and NFET  
products. Four offset voltage grades are available  
(C-suffix and I-suffix types), ranging from the  
0
–800  
–400  
0
400  
800  
V
IO  
– Input Offset Voltage – µV  
low-cost TLC272 (10 mV) to the high-precision TLC277 (500 µV). These advantages, in combination with good  
common-mode rejection and supply voltage rejection, make these devices a good choice for new  
state-of-the-art designs as well as for upgrading existing designs.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...36

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