是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 1 week |
风险等级: | 1.36 | Samacsys Confidence: | 3 |
Samacsys Status: | Released | Samacsys PartID: | 182519 |
Samacsys Pin Count: | 8 | Samacsys Part Category: | Integrated Circuit |
Samacsys Package Category: | Dual-In-Line Packages | Samacsys Footprint Name: | P (R-PDIP-T8) |
Samacsys Released Date: | 2015-06-24 00:00:00 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.00006 µA | 25C 时的最大偏置电流 (IIB): | 0.00006 µA |
最小共模抑制比: | 65 dB | 标称共模抑制比: | 80 dB |
频率补偿: | YES | 最大输入失调电流 (IIO): | 0.00006 µA |
最大输入失调电压: | 500 µV | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e4 | 长度: | 9.81 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | NO | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
包装方法: | TUBE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
功率: | NO | 电源: | 3/16 V |
可编程功率: | NO | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最小摆率: | 2.5 V/us |
标称压摆率: | 3.6 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 1.6 mA | 供电电压上限: | 18 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 320 kHz |
最小电压增益: | 5000 | 宽带: | NO |
宽度: | 6.35 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TLV2252IP | TI |
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