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TLC272MFKB PDF预览

TLC272MFKB

更新时间： 2024-01-17 02:36:03
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
51页 1485K
描述
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS

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中文翻译

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TLC272MFKB 技术参数

生命周期：Obsolete零件包装代码：DIE
包装说明：DIE-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.56
放大器类型：OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB)：0.00006 µA
最小共模抑制比：65 dB标称共模抑制比：80 dB
最大输入失调电压：10000 µVJESD-30 代码：R-XUUC-N8
功能数量：2端子数量：8
最高工作温度：70 °C最低工作温度：
封装主体材料：UNSPECIFIED封装代码：DIE
封装形状：RECTANGULAR封装形式：UNCASED CHIP
认证状态：Not Qualified标称压摆率：2.9 V/us
子类别：Operational Amplifier供电电压上限：18 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：NO LEAD端子位置：UPPER
标称均一增益带宽：1700 kHz最小电压增益：10000
Base Number Matches：1

TLC272MFKB 数据手册

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TLC272, TLC272A, TLC272B, TLC272Y, TLC277  
LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS  
SLOS091E – OCTOBER 1987 – REVISED FEBRUARY 2002  
D, JG, P, OR PW PACKAGE  
(TOP VIEW)  
D
Trimmed Offset Voltage:  
TLC277 . . . 500 µV Max at 25°C,  
= 5 V  
V
DD  
1OUT  
1IN–  
1IN+  
GND  
V
DD  
1
2
3
4
8
7
6
5
D
D
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
2OUT  
2IN–  
2IN+  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
–40°C to 85°C . . . 4 V to 16 V  
–55°C to 125°C . . . 4 V to 16 V  
FK PACKAGE  
(TOP VIEW)  
D
D
Single-Supply Operation  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix,  
I-Suffix types)  
3
2
1
20 19  
18  
D
D
D
D
D
Low Noise . . . Typically 25 nV/√Hz at  
f = 1 kHz  
NC  
NC  
4
5
6
7
8
2OUT  
NC  
1IN–  
NC  
17  
16  
15  
14  
Output Voltage Range Includes Negative  
Rail  
2IN–  
NC  
1IN+  
NC  
12  
High Input impedance . . . 10 Ω Typ  
9 10 11 12 13  
ESD-Protection Circuitry  
Small-Outline Package Option Also  
Available in Tape and Reel  
D
Designed-In Latch-Up Immunity  
NC – No internal connection  
description  
The TLC272 and TLC277 precision dual  
DISTRIBUTION OF TLC277  
INPUT OFFSET VOLTAGE  
operational amplifiers combine a wide range of  
input offset voltage grades with low offset voltage  
drift, high input impedance, low noise, and speeds  
approaching those of general-purpose BiFET  
devices.  
30  
25  
20  
15  
10  
473 Units Tested From 2 Wafer Lots  
= 5 V  
DD  
= 25°C  
V
T
A
P Package  
These devices use Texas Instruments silicon-  
gate LinCMOS  
technology, which provides  
offset voltage stability far exceeding the stability  
available with conventional metal-gate pro-  
cesses.  
The extremely high input impedance, low bias  
currents, and high slew rates make these cost-  
effective devices ideal for applications previously  
reserved for BiFET and NFET products. Four  
offset voltage grades are available (C-suffix and  
I-suffix types), ranging from the low-cost TLC272  
(10 mV) to the high-precision TLC277 (500 µV).  
These advantages, in combination with good  
common-mode rejection and supply voltage  
rejection, make these devices a good choice for  
new state-of-the-art designs as well as for  
upgrading existing designs.  
5
0
–800  
–400  
0
400  
800  
V
IO  
– Input Offset Voltage – µV  
LinCMOS is a trademark of Texas Instruments.  
Copyright 2002, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...51

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