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TLC271BCDR PDF预览

TLC271BCDR

更新时间: 2024-10-31 04:28:11
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
82页 1356K
描述
LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS

TLC271BCDR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:6 weeks
风险等级:0.94Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.00006 µA25C 时的最大偏置电流 (IIB):0.00006 µA
最小共模抑制比:65 dB标称共模抑制比:80 dB
频率补偿:YES最大输入失调电流 (IIO):0.00006 µA
最大输入失调电压:2000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:4.9 mm
低-偏置:YES低-失调:NO
微功率:NO湿度敏感等级:1
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TR
峰值回流温度(摄氏度):260功率:NO
电源:3/16 V可编程功率:YES
认证状态:Not Qualified座面最大高度:1.75 mm
标称压摆率:3.6 V/us子类别:Operational Amplifier
最大压摆率:1.6 mA供电电压上限:18 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:2000 kHz
最小电压增益:5000宽带:NO
宽度:3.91 mmBase Number Matches:1

TLC271BCDR 数据手册

 浏览型号TLC271BCDR的Datasheet PDF文件第2页浏览型号TLC271BCDR的Datasheet PDF文件第3页浏览型号TLC271BCDR的Datasheet PDF文件第4页浏览型号TLC271BCDR的Datasheet PDF文件第5页浏览型号TLC271BCDR的Datasheet PDF文件第6页浏览型号TLC271BCDR的Datasheet PDF文件第7页 
TLC271, TLC271A, TLC271B  
LinCMOS PROGRAMMABLE LOW-POWER  
OPERATIONAL AMPLIFIERS  
SLOS090D – NOVEMBER 1987 – REVISED MARCH 2001  
D, JG, OR P PACKAGE  
(TOP VIEW)  
Input Offset Voltage Drift . . . Typically  
0.1 µV/Month, Including the First 30 Days  
Wide Range of Supply Voltages Over  
Specified Temperature Range:  
0°C to 70°C . . . 3 V to 16 V  
OFFSET N1  
IN –  
BIAS SELECT  
1
2
3
4
8
7
6
5
V
DD  
IN +  
GND  
OUT  
OFFSET N2  
40°C to 85°C . . . 4 V to 16 V  
55°C to 125°C . . . 5 V to 16 V  
Single-Supply Operation  
FK PACKAGE  
(TOP VIEW)  
Common-Mode Input Voltage Range  
Extends Below the Negative Rail (C-Suffix  
and I-Suffix Types)  
Low Noise . . . 25 nV/Hz Typically at  
f = 1 kHz (High-Bias Mode)  
Output Voltage Range Includes Negative  
Rail  
3
2
1
20 19  
18  
NC  
NC  
IN –  
NC  
4
5
6
7
8
12  
High Input Impedance . . . 10 Typ  
V
17  
DD  
ESD-Protection Circuitry  
NC  
16  
15  
14  
Small-Outline Package Option Also  
Available in Tape and Reel  
OUT  
NC  
IN +  
NC  
9 10 11 12 13  
Designed-In Latch-Up Immunity  
description  
The TLC271 operational amplifier combines a  
wide range of input offset voltage grades with low  
offset voltage drift and high input impedance. In  
addition, the TLC271 offers a bias-select mode  
NC – No internal connection  
that allows the user to select the best combination of power dissipation and ac performance for a particular  
application. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offset  
voltage stability far exceeding the stability available with conventional metal-gate processes.  
AVAILABLE OPTIONS  
PACKAGE  
V
max  
IO  
T
A
SMALL OUTLINE  
(D)  
CHIP CARRIER  
(FK)  
CERAMIC DIP  
(JG)  
PLASTIC DIP  
(P)  
AT 25°C  
2 mV  
5 mV  
10 mV  
TLC271BCD  
TLC271ACD  
TLC271CD  
TLC271BCP  
TLC271ACP  
TLC271CP  
0°C to 70°C  
2 mV  
5 mV  
10 mV  
TLC271BID  
TLC271AID  
TLC271ID  
TLC271BIP  
TLC271AIP  
TLC271IP  
40°C to 85°C  
55°C to 125°C  
10 mV  
TLC271MD  
TLC271MFK  
TLC271MJG  
TLC271MP  
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TLC271BCDR 替代型号

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