是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | CERAMIC, DIP-14 | 针数: | 14 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.68 |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | CHOPPER-STAB |
最大平均偏置电流 (IIB): | 0.0005 µA | 25C 时的最大偏置电流 (IIB): | 0.0005 µA |
最小共模抑制比: | 110 dB | 标称共模抑制比: | 125 dB |
频率补偿: | YES | 最大输入失调电压: | 40 µV |
JESD-30 代码: | R-GDIP-T14 | 长度: | 19.56 mm |
低-偏置: | YES | 低-失调: | YES |
微功率: | NO | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 1 | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP14,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
功率: | NO | 电源: | +-5 V |
可编程功率: | NO | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最小摆率: | 1.1 V/us |
标称压摆率: | 2 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 2.2 mA | 供电电压上限: | 8 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 1900 kHz | 最小电压增益: | 1000000 |
宽带: | NO | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
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Advanced LinCMOSE LOW-NOISE CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS |