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TLC254ACJ PDF预览

TLC254ACJ

更新时间： 2024-09-16 13:14:47
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
21页 316K
描述
QUAD OP-AMP, 6500uV OFFSET-MAX, 0.075MHz BAND WIDTH, CDIP14

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中文翻译

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TLC254ACJ 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：DIP, DIP14,.3
针数：14Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.71放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.0006 µA
标称共模抑制比：77 dB频率补偿：YES
最大输入失调电压：6500 µVJESD-30 代码：R-GDIP-T14
长度：19.56 mm低-偏置：YES
低-失调：NO功能数量：4
端子数量：14最高工作温度：70 °C
最低工作温度：封装主体材料：CERAMIC, GLASS-SEALED
封装代码：DIP封装等效代码：DIP14,.3
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：NOT SPECIFIED电源：1.4/16 V
认证状态：Not Qualified座面最大高度：5.08 mm
标称压摆率：0.01 V/us子类别：Operational Amplifier
最大压摆率：8.8 mA供电电压上限：18 V
标称供电电压 (Vsup)：1.4 V表面贴装：NO
技术：CMOS温度等级：COMMERCIAL
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：75 kHz最小电压增益：7500
宽度：7.62 mmBase Number Matches：1

TLC254ACJ 数据手册

 浏览型号TLC254ACJ的Datasheet PDF文件第2页浏览型号TLC254ACJ的Datasheet PDF文件第3页浏览型号TLC254ACJ的Datasheet PDF文件第4页浏览型号TLC254ACJ的Datasheet PDF文件第5页浏览型号TLC254ACJ的Datasheet PDF文件第6页浏览型号TLC254ACJ的Datasheet PDF文件第7页 
TLC254, TLC254A, TLC254B, TLC254Y, TLC25L4, TLC25L4A, TLC25L4B  
TLC25L4Y, TLC25M4, TLC25M4A, TLC25M4B, TLC25M4Y  
LinCMOS QUAD OPERATIONAL AMPLIFIERS  
SLOS003F – JUNE 1983 – REVISED AUGUST 1994  
A-Suffix Versions Offer 5-mV V  
IO  
IO  
D, N, OR PW PACKAGE  
(TOP VIEW)  
B-Suffix Versions Offer 2-mV V  
Wide Range of Supply Voltages  
1.4 V to 16 V  
1OUT  
1IN–  
1IN+  
4OUT  
4IN–  
4IN+  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
True Single-Supply Operation  
Common-Mode Input Voltage Includes the  
Negative Rail  
V
V
/GND  
DD  
DD–  
2IN+  
2IN–  
3IN+  
2IN–  
3OUT  
Low Noise . . . 25 nV/√Hz Typ at f = 1 kHz  
(High-Bias Version)  
2OUT  
8
description  
The TLC254, TLC254A, TLC254B, TLC25L4,  
TLC254L4A, TLC254L4B, TLC25M4, TLC25M4A  
and TL25M4B are low-cost, low-power quad  
operational amplifiers designed to operate with  
single or dual supplies. These devices utilize the  
Texas Instruments silicon gate LinCMOS  
symbol (each amplifier)  
+
–
IN+  
IN–  
OUT  
process, giving them stable input-offset voltages that are available in selected grades of 2, 5, or 10 mV  
maximum, very high input impedances, and extremely low input offset and bias currents. Because the input  
common-mode range extends to the negative rail and the power consumption is extremely low, this series is  
ideally suited for battery-powered or energy-conserving applications. The series offers operation down to a  
1.4-V supply, is stable at unity gain, and has excellent noise characteristics.  
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures  
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised  
in handling these devices as exposure to ESD may result in degradation of the device parametric performance.  
Because of the extremely high input impedance and low input bias and offset currents, applications for these  
devices include many areas that have previously been limited to BIFET and NFET product types. Any circuit  
using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of  
these devices. Many features associated with bipolar technology are available with LinCMOS operational  
amplifiers without the power penalties of traditional bipolar devices.  
Available options  
PACKAGED DEVICES  
V
max  
CHIP FORM  
(Y)  
IO  
T
A
SMALL OUTLINE  
(D)  
PLASTIC DIP  
(N)  
TSSOP  
(PW)  
AT 25°C  
10 mV  
5 mV  
2 mV  
TLC254CD  
TLC254ACD  
TLC254BCD  
TLC254CN  
TLC254ACN  
TLC254BCN  
TLC254CPW  
TLC254Y  
—
—
—
—
10 mV  
5 mV  
2 mV  
TLC25L4CD  
TLC25L4ACD  
TLC25L2BCD  
TLC25L4CN  
TLC25L4ACN  
TLC25L4BCN  
TLC25L4CPW  
TLC25L4Y  
0°C to 70°C  
—
—
—
—
10 mV  
5 mV  
2 mV  
TLC25M4CD  
TLC25M4ACD  
TLC25M4BCD  
TLC25M4CN  
TLC25M4ACN  
TLC25M4BCN  
TLC25M4CPW  
TLC25M4Y  
—
—
—
—
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC254CDR). Chips  
are tested at 25°C.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...21

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