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TLC251CDR

更新时间： 2024-11-23 13:14:43
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
18页 274K
描述
1-Channel, 2MHz, low-pffset, low-input voltage, 16V LinCMOS op amp 8-SOIC 0 to 70

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中文翻译

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TLC251CDR 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：6 weeks
风险等级：5.16Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.00006 µA25C 时的最大偏置电流 (IIB)：0.00006 µA
最小共模抑制比：65 dB标称共模抑制比：80 dB
频率补偿：YES最大输入失调电流 (IIO)：0.00006 µA
最大输入失调电压：12000 µVJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
低-偏置：YES低-失调：NO
微功率：NO湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TR
峰值回流温度（摄氏度）：260功率：NO
电源：5/10 V可编程功率：YES
认证状态：Not Qualified座面最大高度：1.75 mm
标称压摆率：3.6 V/us子类别：Operational Amplifier
最大压摆率：2.2 mA供电电压上限：18 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：1700 kHz
最小电压增益：10000宽带：NO
宽度：3.9 mmBase Number Matches：1

TLC251CDR 数据手册

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TLC251, TLC251A, TLC251B, TLC251Y  
LinCMOS PROGRAMMABLE  
LOW-POWER OPERATIONAL AMPLIFIERS  
SLOS001E – JULY 1983 – REVISED AUGUST 1994  
D OR P PACKAGE  
(TOP VIEW)  
Wide Range of Supply Voltages  
1.4 V to 16 V  
True Single-Supply Operation  
OFFSET N1  
IN–  
BIAS SELECT  
1
2
3
4
8
7
6
5
Common-Mode Input Voltage Range  
Includes the Negative Rail  
V
DD  
IN+  
OUT  
OFFSET N2  
V
/GND  
Low Noise . . . 30 nV/√Hz Typ at 1 kHz  
DD–  
(High Bias)  
ESD Protection Exceeds 2000 V Per  
MIL-STD-833C, Method 3015.1  
symbol  
description  
BIAS SELECT  
The TLC251C, TLC251AC, and TLC251BC are  
low-cost, low-power programmable operational  
amplifiers designed to operate with single or dual  
supplies. Unlike traditional metal-gate CMOS  
operational amplifiers, these devices utilize Texas  
+
–
IN+  
IN–  
OUT  
Instruments silicon-gate LinCMOS  
giving them stable input offset voltages without  
sacrificing the advantages of metal-gate CMOS.  
process,  
OFFSET N1  
OFFSET N2  
This series of parts is available in selected grades of input offset voltage and can be nulled with one external  
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption  
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A  
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the  
application. The series features operation down to a 1.4-V supply and is stable at unity gain.  
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures  
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised  
in handling these devices as exposure to ESD may result in a degradation of the device parametric  
performance.  
Because of the extremely high input impedance and low input bias and offset currents, applications for the  
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any  
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective  
use of these devices. Many features associated with bipolar technology are available with LinCMOS  
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible  
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.  
Inaddition, bydrivingthebias-selectinputwithalogicsignalfromamicroprocessor, theseoperationalamplifiers  
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve  
the difficult problems associated with single battery and solar cell-powered applications.  
The TLC251C series is characterized for operation from 0°C to 70°C.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
V
max  
CHIP FORM  
(Y)  
IO  
T
A
SMALL OUTLINE  
(D)  
PLASTIC DIP  
(P)  
AT 25°C  
10 mV  
5 mV  
2 mV  
TLC251CD  
TLC251ACD  
TLC251BCD  
TLC251CP  
TLC251ACP  
TLC251BCP  
TLC251Y  
—
—
0°C to 70°C  
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are  
tested at 25°C.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...18

中文翻译

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TLC251CDR 替代型号

型号 品牌 替代类型 描述 数据表
TLC251CD TI

类似代替

 LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS
TLC251ACD TI

类似代替

 LinCMOSE PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS

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