生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP-8 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 6 weeks |
风险等级: | 5.11 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.0008 µA | 25C 时的最大偏置电流 (IIB): | 0.00006 µA |
最小共模抑制比: | 70 dB | 标称共模抑制比: | 80 dB |
频率补偿: | YES | 最大输入失调电流 (IIO): | 0.00006 µA |
最大输入失调电压: | 3000 µV | JESD-30 代码: | R-GDIP-T8 |
长度: | 9.58 mm | 低-偏置: | YES |
低-失调: | NO | 微功率: | NO |
负供电电压上限: | -8 V | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | CERAMIC, GLASS-SEALED | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 包装方法: | TUBE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 功率: | NO |
电源: | +-2.2/+-8/4.4/16 V | 可编程功率: | NO |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最小摆率: | 1.7 V/us | 标称压摆率: | 3.6 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 3 mA |
供电电压上限: | 8 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 2250 kHz |
最小电压增益: | 10000 | 宽带: | NO |
宽度: | 7.62 mm | Base Number Matches: | 1 |
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