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TLC226A PDF预览

TLC226A

更新时间: 2024-11-19 22:59:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关
页数 文件大小 规格书
5页 55K
描述
SENSITIVE GATE TRIACS

TLC226A 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.77
其他特性:SENSITIVE GATE配置:SINGLE
关态电压最小值的临界上升速率:20 V/us最大直流栅极触发电流:10 mA
最大直流栅极触发电压:1.5 V最大维持电流:25 mA
JESD-30 代码:R-PSIP-T3最大漏电流:0.75 mA
元件数量:1端子数量:3
最高工作温度:110 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
最大均方根通态电流:3 A重复峰值关态漏电流最大值:10 µA
断态重复峰值电压:400 V子类别:TRIACs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:TRIAC
Base Number Matches:1

TLC226A 数据手册

 浏览型号TLC226A的Datasheet PDF文件第2页浏览型号TLC226A的Datasheet PDF文件第3页浏览型号TLC226A的Datasheet PDF文件第4页浏览型号TLC226A的Datasheet PDF文件第5页 
TLC116 ---> TLC386  
T/D/S/A  
SENSITIVE GATE TRIACS  
FEATURES  
VERY LOW I = 5mA max  
.
GT  
LOW I = 15mA max  
.
H
DESCRIPTION  
The TLC116 ---> TLC386 T/D/S/A triac family  
uses a high performance glass passivated PNPN  
technology.  
A1  
A2  
G
These parts are suitable for general purpose ap-  
plications where gate high sensitivity is required.  
Application on 4Q such as phase control and static  
TL  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
3
Unit  
I
RMS on-state current  
(360 conduction angle)  
Tl = 40°C  
Ta = 25°C  
tp = 8.3 ms  
tp = 10 ms  
tp = 10 ms  
A
T(RMS)  
°
1.3 (1)  
31.5  
30  
I
Non repetitive surge peak on-state current  
( Tj initial = 25 C )  
A
TSM  
°
2
2
2
I t  
I t value  
4.5  
A s  
dI/dt  
Critical rate of rise of on-state current  
Repetitive  
F = 50 Hz  
10  
A/µs  
Gate supply : I = 50mA di /dt = 0.1A/ s  
µ
G
G
Non  
50  
Repetitive  
Tstg  
Tj  
Storage and operating junction temperature range  
- 40 to + 150  
- 40 to + 110  
°C  
C
°
Tl  
Maximum lead temperature for soldering during 4 s at 4.5 mm  
from case  
230  
C
°
Symbol  
Parameter  
TLC  
226 T/D/S/A 336 T/D/S/A  
400 600  
Unit  
116 T/D/S/A  
386 T/D/S/A  
700  
V
V
Repetitive peak off-state  
200  
V
DRM  
RRM  
voltage  
Tj = 110°C  
(1) With Cu surface 1cm2.  
1/5  
February 1999 Ed: 1A  

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