生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | CERAMIC, DIP-14 | 针数: | 14 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.65 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.001 µA |
25C 时的最大偏置电流 (IIB): | 0.0005 µA | 标称共模抑制比: | 88 dB |
频率补偿: | YES | 最大输入失调电压: | 1000 µV |
JESD-30 代码: | R-GDIP-T14 | 长度: | 19.56 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 负供电电压上限: | -8 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 4 |
端子数量: | 14 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP14,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5/+-5 V | 认证状态: | Not Qualified |
筛选级别: | MIL-PRF-38535 | 座面最大高度: | 5.08 mm |
最小摆率: | 0.05 V/us | 标称压摆率: | 0.12 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 0.3 mA |
供电电压上限: | 8 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
标称均一增益带宽: | 210 kHz | 最小电压增益: | 10000 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
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