生命周期: | Obsolete | 零件包装代码: | DFP |
包装说明: | CERAMIC, DFP-10 | 针数: | 10 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.12 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.001 µA |
25C 时的最大偏置电流 (IIB): | 0.0005 µA | 标称共模抑制比: | 88 dB |
频率补偿: | YES | 最大输入失调电压: | 1750 µV |
JESD-30 代码: | R-GDFP-F10 | 长度: | 6.475 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 负供电电压上限: | -8 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 2 |
端子数量: | 10 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DFP | 封装等效代码: | FL10,.3 |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK |
电源: | 5/+-5 V | 认证状态: | Not Qualified |
筛选级别: | MIL-PRF-38535 | 座面最大高度: | 2.03 mm |
最小摆率: | 0.05 V/us | 标称压摆率: | 0.12 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 0.15 mA |
供电电压上限: | 8 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | FLAT |
端子节距: | 1.27 mm | 端子位置: | DUAL |
标称均一增益带宽: | 210 kHz | 最小电压增益: | 10000 |
宽度: | 6.225 mm | Base Number Matches: | 1 |
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Advanced LinCMOS⑩ RAIL-TO-RAIL VERY LOW-POWER | |
TLC2252QDRQ1 | TI |
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advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
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Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POW | |
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advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
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高级 LinCMOS 轨到轨超低功耗运算放大器 | TD | 0 | 0 to 0 |