是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOIC |
包装说明: | SOIC-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.14 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.001 µA |
25C 时的最大偏置电流 (IIB): | 0.00006 µA | 最小共模抑制比: | 70 dB |
标称共模抑制比: | 83 dB | 频率补偿: | YES |
最大输入失调电流 (IIO): | 0.00006 µA | 最大输入失调电压: | 850 µV |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
长度: | 4.9 mm | 低-偏置: | YES |
低-失调: | NO | 微功率: | YES |
湿度敏感等级: | 1 | 负供电电压上限: | -8 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
包装方法: | TR | 峰值回流温度(摄氏度): | 260 |
功率: | NO | 电源: | +-2.2/+-8/4.4/16 V |
可编程功率: | NO | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 最小摆率: | 0.05 V/us |
标称压摆率: | 0.12 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.125 mA | 供电电压上限: | 8 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 200 kHz |
最小电压增益: | 10000 | 宽带: | NO |
宽度: | 3.9 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
V62/04682-01XE | TI |
完全替代 |
VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLC2252IDG4 | TI |
完全替代 |
Advanced LinCMOS⑩ RAIL-TO-RAIL VERY LOW-POWER | |
TLC2252ID | TI |
类似代替 |
Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS |
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