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TLC2202BCDR PDF预览

TLC2202BCDR

更新时间： 2024-11-09 04:49:11
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
66页 1018K
描述
Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

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中文翻译

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TLC2202BCDR 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：PLASTIC, MS-012AB, SOIC-14针数：14
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.88
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.0001 µA
最小共模抑制比：80 dB标称共模抑制比：115 dB
频率补偿：YES最大输入失调电压：650 µV
JESD-30 代码：R-PDSO-G14长度：8.65 mm
低-偏置：YES低-失调：YES
微功率：YES负供电电压上限：-8 V
标称负供电电压 (Vsup)：-5 V功能数量：2
端子数量：14最高工作温度：70 °C
最低工作温度：封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP14,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
包装方法：TAPE AND REEL峰值回流温度（摄氏度）：NOT SPECIFIED
功率：NO电源：5/+-5 V
可编程功率：NO认证状态：Not Qualified
座面最大高度：1.75 mm最小摆率：1.3 V/us
标称压摆率：2.7 V/us子类别：Operational Amplifier
最大压摆率：2.7 mA供电电压上限：8 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：1900 kHz最小电压增益：25000
宽带：NO宽度：3.9 mm
Base Number Matches：1

TLC2202BCDR 数据手册

 浏览型号TLC2202BCDR的Datasheet PDF文件第2页浏览型号TLC2202BCDR的Datasheet PDF文件第3页浏览型号TLC2202BCDR的Datasheet PDF文件第4页浏览型号TLC2202BCDR的Datasheet PDF文件第5页浏览型号TLC2202BCDR的Datasheet PDF文件第6页浏览型号TLC2202BCDR的Datasheet PDF文件第7页 
TLC220x, TLC220xA, TLC220xB, TLC220xY  
Advanced LinCMOS LOW-NOISE PRECISION  
OPERATIONAL AMPLIFIERS  
SLOS175 – FEBRUARY 1997  
B Grade Is 100% Tested for Noise  
30 nV/√Hz Max at f = 10 Hz  
12 nV/√Hz Max at f = 1 kHz  
Low Input Bias Current  
1 pA Typ at T = 25°C  
A
Common-Mode Input Voltage Range  
Includes the Negative Rail  
Low Input Offset Voltage . . . 500 µV Max  
Excellent Offset Voltage Stability  
With Temperature . . . 0.5 µV/°C Typ  
Fully Specified For Both Single-Supply and  
Split-Supply Operation  
Rail-to-Rail Output Swing  
TYPICAL EQUIVALENT  
INPUT NOISE VOLTAGE  
vs  
description  
FREQUENCY  
The TLC220x, TLC220xA, TLC220xB, and  
TLC220xY are precision, low-noise operational  
amplifiers using Texas Instruments Advanced  
LinCMOS process. These devices combine the  
noise performance of the lowest-noise JFET  
amplifiers with the dc precision available  
previously only in bipolar amplifiers. The  
Advanced LinCMOS process uses silicon-gate  
technology to obtain input offset voltage stability  
with temperature and time that far exceeds that  
obtainable using metal-gate technology. In  
addition, this technology makes possible input  
impedance levels that meet or exceed levels  
offered by top-gate JFET and expensive  
dielectric-isolated devices.  
60  
V
= 5 V  
= 20 Ω  
= 25°C  
DD  
S
R
T
50  
40  
30  
20  
10  
0
A
The combination of excellent dc and noise  
performance with a common-mode input voltage  
range that includes the negative rail makes these  
devices an ideal choice for high-impedance,  
low-level signal-conditioning applications in either  
single-supply or split-supply configurations.  
1
10  
100  
1 k  
10 k  
f – Frequency – Hz  
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.  
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under  
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure  
to ESD may result in degradation of the parametric performance.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of –55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
On products compliant to MIL-PRF-38535, all parameters are tested  
unless otherwise noted. On all other products, production  
processing does not necessarily include testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...66

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