5秒后页面跳转
捷配首页

Datasheet > 放大器电路 > 运算放大器> TLC2201MJG
TLC2201MJG PDF预览

TLC2201MJG

更新时间： 2024-11-29 22:49:47
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
62页 966K
描述
Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

阅读下载

中文翻译

获取价格

TLC2201MJG 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：DIP
包装说明：CERAMIC, DIP-8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.05
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.0005 µA25C 时的最大偏置电流 (IIB)：0.0005 µA
最小共模抑制比：85 dB标称共模抑制比：115 dB
频率补偿：YES最大输入失调电压：700 µV
JESD-30 代码：R-GDIP-T8长度：9.58 mm
低-偏置：YES低-失调：YES
负供电电压上限：-8 V标称负供电电压 (Vsup)：-5 V
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装等效代码：DIP8,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：+-2.3/+-8/4.6/16 V认证状态：Not Qualified
座面最大高度：5.08 mm最小摆率：1.3 V/us
标称压摆率：2.7 V/us子类别：Operational Amplifier
最大压摆率：1.5 mA供电电压上限：8 V
标称供电电压 (Vsup)：5 V表面贴装：NO
技术：CMOS温度等级：MILITARY
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：1900 kHz最小电压增益：45000
宽度：7.62 mmBase Number Matches：1

TLC2201MJG 数据手册

 浏览型号TLC2201MJG的Datasheet PDF文件第2页浏览型号TLC2201MJG的Datasheet PDF文件第3页浏览型号TLC2201MJG的Datasheet PDF文件第4页浏览型号TLC2201MJG的Datasheet PDF文件第5页浏览型号TLC2201MJG的Datasheet PDF文件第6页浏览型号TLC2201MJG的Datasheet PDF文件第7页 
TLC220x, TLC220xA, TLC220xB, TLC220xY  
Advanced LinCMOS LOW-NOISE PRECISION  
OPERATIONAL AMPLIFIERS  
SLOS175 – FEBRUARY 1997  
B Grade Is 100% Tested for Noise  
30 nV/√Hz Max at f = 10 Hz  
12 nV/√Hz Max at f = 1 kHz  
Low Input Bias Current  
1 pA Typ at T = 25°C  
A
Common-Mode Input Voltage Range  
Includes the Negative Rail  
Low Input Offset Voltage . . . 500 µV Max  
Excellent Offset Voltage Stability  
With Temperature . . . 0.5 µV/°C Typ  
Fully Specified For Both Single-Supply and  
Split-Supply Operation  
Rail-to-Rail Output Swing  
TYPICAL EQUIVALENT  
INPUT NOISE VOLTAGE  
vs  
description  
FREQUENCY  
The TLC220x, TLC220xA, TLC220xB, and  
TLC220xY are precision, low-noise operational  
amplifiers using Texas Instruments Advanced  
LinCMOS process. These devices combine the  
noise performance of the lowest-noise JFET  
amplifiers with the dc precision available  
previously only in bipolar amplifiers. The  
Advanced LinCMOS process uses silicon-gate  
technology to obtain input offset voltage stability  
with temperature and time that far exceeds that  
obtainable using metal-gate technology. In  
addition, this technology makes possible input  
impedance levels that meet or exceed levels  
offered by top-gate JFET and expensive  
dielectric-isolated devices.  
60  
V
= 5 V  
= 20 Ω  
= 25°C  
DD  
S
R
T
50  
40  
30  
20  
10  
0
A
The combination of excellent dc and noise  
performance with a common-mode input voltage  
range that includes the negative rail makes these  
devices an ideal choice for high-impedance,  
low-level signal-conditioning applications in either  
single-supply or split-supply configurations.  
1
10  
100  
1 k  
10 k  
f – Frequency – Hz  
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up.  
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under  
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure  
to ESD may result in degradation of the parametric performance.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of –55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
On products compliant to MIL-PRF-38535, all parameters are tested  
unless otherwise noted. On all other products, production  
processing does not necessarily include testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...62

中文翻译

下载PDF

与TLC2201MJG相关器件

型号 品牌 获取价格 描述 数据表
TLC2201MJGB TI

获取价格

 		Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2201ML TI

获取价格

 		OP-AMP, 700uV OFFSET-MAX, 1.9MHz BAND WIDTH, MBCY8, HERMETIC SEALED, METAL CAN-8
TLC2201MP TI

获取价格

 		Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2201-SP TI

获取价格

 		CLASS V, ADVANCED LinCMOS™ LOW NOISE PRECIS
TLC2201Y TI

获取价格

 		Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2202 TI

获取价格

 		Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2202ACD ROCHESTER

获取价格

 		DUAL OP-AMP, 650uV OFFSET-MAX, 1.9MHz BAND WIDTH, PDSO14, PLASTIC, MS-012AB, SOIC-14
TLC2202ACD TI

获取价格

 		Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2202ACDG4 TI

获取价格

 		Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
TLC2202ACDR TI

获取价格

 		Advanced LinCMOSE LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

与TLC2201MJG相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证