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TL7757CDE4 PDF预览

TL7757CDE4

更新时间： 2024-02-27 04:27:35
品牌 Logo 应用领域
德州仪器 - TI 电源电路电源管理电路运算放大器光电二极管输出元件驱动
页数 文件大小 规格书
48页 1161K
描述
FAMILY OF WIDE - BANDWITH HIGH-OUTPUT-DRIVE SINGLE SUPPLY OPERATIONAL AMPLIFIERS

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TL7757CDE4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：5.12Is Samacsys：N
其他特性：RESET THRESHOLD VOLTAGE IS 4.55V可调阈值：NO
模拟集成电路 - 其他类型：POWER SUPPLY SUPPORT CIRCUITJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
湿度敏感等级：1信道数量：1
功能数量：1端子数量：8
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
电源：1/7 V认证状态：Not Qualified
座面最大高度：1.58 mm子类别：Power Management Circuits
最大供电电流 (Isup)：2 mA最大供电电压 (Vsup)：7 V
最小供电电压 (Vsup)：1 V标称供电电压 (Vsup)：4.3 V
表面贴装：YES技术：BIPOLAR
温度等级：COMMERCIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL阈值电压标称：4.55
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.91 mm
Base Number Matches：1

TL7757CDE4 数据手册

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SLOS254E − JUNE 1999 − REVISED APRIL 2006  
D
D
Wide Bandwidth . . . 10 MHz  
High Output Drive  
Operational Amplifier  
− I  
− I  
. . . 57 mA at V  
. . . 55 mA at 0.5 V  
− 1.5 V  
OH  
OL  
DD  
D
High Slew Rate  
− SR+ . . . 16 V/µs  
− SR− . . . 19 V/µs  
−
+
D
D
D
Wide Supply Range . . . 4.5 V to 16 V  
Supply Current . . . 1.9 mA/Channel  
Ultralow Power Shutdown Mode  
I
. . . 125 µA/Channel  
DD  
D
D
D
Low Input Noise Voltage . . . 8.5 nV√Hz  
Input Offset Voltage . . . 60 µV  
Ultra-Small Packages  
− 8 or 10 Pin MSOP (TLC080/1/2/3)  
description  
The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC08x. The BiMOS  
family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to  
single-supply systems and demand higher ac and dc performance. With performance rated from 4.5 V to 16  
V across commercial (0°C to 70°C) and an extended industrial temperature range (−40°C to 125°C), BiMOS  
suits a wide range of audio, automotive, industrial, and instrumentation applications. Familiar features like offset  
nulling pins, and new features like MSOP PowerPADpackages and shutdown modes, enable higher levels  
of performance in a variety of applications.  
Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input  
impedance, low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum  
performance features of both. AC performance improvements over the TL08x BiFET predecessors include a  
bandwidth of 10 MHz (an increase of 300%) and voltage noise of 8.5 nV/√Hz (an improvement of 60%). DC  
improvements include an ensured V  
that includes ground, a factor of 4 reduction in input offset voltage down  
ICR  
to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB  
to 130 dB. Added to this list of impressive features is the ability to drive 50-mA loads comfortably from an  
ultrasmall-footprint MSOP PowerPAD package, which positions the TLC08x as the ideal high-performance  
general-purpose operational amplifier family.  
FAMILY PACKAGE TABLE  
PACKAGE TYPES  
NO. OF  
CHANNELS  
UNIVERSAL  
EVM BOARD  
DEVICE  
SHUTDOWN  
MSOP  
PDIP  
8
SOIC  
8
TSSOP  
—
TLC080  
TLC081  
TLC082  
TLC083  
TLC084  
TLC085  
1
1
2
2
4
4
8
8
Yes  
8
8
—
Refer to the EVM  
Selection Guide  
(Lit# SLOU060)  
8
8
8
—
—
Yes  
—
10  
—
—
14  
14  
16  
14  
14  
16  
—
20  
20  
Yes  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PowerPAD is a trademark of Texas Instruments. All other trademarks are the property of their respective owners.  
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Copyright 2000−2006 Texas Instruments Incorporated  
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WWW.TI.COM  
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