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ꢈꢉꢊꢋ ꢋꢌ ꢍ ꢁꢋ ꢎꢏ ꢐꢑꢊꢐ ꢒꢀ ꢓꢔ ꢑꢕꢁ ꢉꢖ ꢓ ꢏꢔ ꢈ ꢐꢏ ꢑ
SLDS011B − OCTOBER 1985 − REVISED MAY 1993
N PACKAGE
(TOP VIEW)
D
D
D
D
D
D
Drives up to 20 Lines
70-V Output Voltage Swing Capability
40-mA Output Source Current Capability
High-Speed Serially-Shifted Data Input
CMOS-Compatible Inputs
V
1
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
CC2
CC1
SERIAL DATA OUT
2
DATA IN
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q20
Q19
Q18
Q17
Q16
Q15
Q14
Q13
Q12
3
Direct Replacement for Sprague UCN5812A
4
5
description
6
7
†
The TL5812 and TL5812I are monolithic BIDFET
8
integrated circuits designed to drive a dot matrix
or segmented vacuum fluorescent display (VFD).
Each device features a serial data output to
cascade additional devices for large display
arrays.
9
10
11
12
13
14
Q8
Q9
Q10
Q11
BLANKING
GND
LATCH ENABLE (STROBE)
CLOCK
A 20-bit data word is serially loaded into the shift
register on the low-to-high transition of CLOCK.
Parallel data is transferred to the output buffers
through a 20-bit D-type latch while LATCH
ENABLE is high and is latched when LATCH
ENABLE is low. When BLANKING is high, all
outputs are low.
FN PACKAGE
(TOP VIEW)
The outputs are totem-pole structures formed by
npn emitter-follower and double-diffused MOS
(DMOS) transistors with output voltage ratings of
70 V and a source-current capability of 40 mA. All
inputs are CMOS compatible.
4
3
2 1 28 27 26
The TL5812 is characterized for operation from
0°C to 70°C. The TL5812I is characterized for
operation from −40°C to 85°C.
5
25 Q2
Q18
6
24
23
22
21
20
19
Q3
Q4
Q5
Q6
Q7
Q8
Q17
7
Q16
8
Q15
9
Q14
10
Q13
11
Q12
12 13 14 15 16 17 18
†BIDFET − Bipolar, double-diffused, N-channel and P-channel MOS transistors on same chip. This is a patented process.
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Copyright 1993, Texas Instruments Incorporated
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1
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