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TL1593CNS PDF预览

TL1593CNS

更新时间: 2024-11-01 22:38:39
品牌 Logo 应用领域
德州仪器 - TI 传感器图像传感器
页数 文件大小 规格书
18页 285K
描述
780- 】 488-pixel ccd image sensor

TL1593CNS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:PLASTIC, SOP-16
针数:16Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.87放大器类型:SAMPLE AND HOLD CIRCUIT
最大模拟输入电压:5.6 V最小模拟输入电压:4.6 V
JESD-30 代码:R-PDSO-G16长度:10.2 mm
功能数量:3端子数量:16
最高工作温度:45 °C最低工作温度:-20 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.3封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:12 V认证状态:Not Qualified
采样并保持/跟踪并保持:SAMPLE座面最大高度:2 mm
子类别:Sample and Hold Circuit最大压摆率:28 mA
供电电压上限:16 V标称供电电压 (Vsup):12 V
表面贴装:YES温度等级:COMMERCIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5.3 mmBase Number Matches:1

TL1593CNS 数据手册

 浏览型号TL1593CNS的Datasheet PDF文件第2页浏览型号TL1593CNS的Datasheet PDF文件第3页浏览型号TL1593CNS的Datasheet PDF文件第4页浏览型号TL1593CNS的Datasheet PDF文件第5页浏览型号TL1593CNS的Datasheet PDF文件第6页浏览型号TL1593CNS的Datasheet PDF文件第7页 
TC241  
780- × 488-PIXEL CCD IMAGE SENSOR  
SOCS006C – AUGUST 1986 – REVISED DECEMBER 1991  
DUAL-IN-LINE PACKAGE  
(TOP VIEW)  
High-Resolution, Solid-State Image Sensor  
for NTSC B/W TV Applications  
11-mm Image-Area Diagonal, Compatible  
With 2/3” Vidicon Optics  
1
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
12  
SUB  
IAG  
SUB  
ABG  
IAG  
2
754 (H) x 244 (V) Active Elements in  
Image-Sensing Area  
3
SAG  
Low Dark Current  
4
TDB  
SAG  
SRG3  
SRG2  
SRG1  
TRG  
IDB  
Electron-Hole Recombination Antiblooming  
Dynamic Range . . . More Than 60 dB  
High Sensitivity  
5
ADB  
6
OUT3  
OUT2  
OUT1  
AMP GND  
GND  
High Photoresponse Uniformity  
High Blue Response  
7
8
Single-Phase Clocking  
9
Solid-State Reliability With No Image  
Burn-in, Residual Imaging, Image  
Distortion, Image Lag, or Microphonics  
10  
11  
CDB  
SUB  
SUB  
description  
The TC241 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W  
NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small  
size, high reliability, and low cost.  
The image-sensing area of the TC241 is configured into 244 lines with 780 elements in each line. Twenty-four  
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based  
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated  
by supplying clocking pulses to the antiblooming gate, which is an integral part of each image- sensing element.  
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements  
by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the  
vertical resolution and minimizing aliasing. The device can also be run as a 754 (H) by 244 (V) noninterlaced  
sensor with significant reduction in the dark signal.  
Agatedfloating-diffusiondetectionstructurewithanautomaticresetandvoltagereferenceincorporatedon-chip  
converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and  
provides high output-drive capability.  
The TC241 is built using TI-proprietary virtual-phase technology, which provides devices with high blue  
response, low dark current, high photoresponse uniformity, and single-phase clocking.  
The TC241 is characterized for operation from –10°C to 45°C.  
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together  
or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no  
circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent  
damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is  
allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling  
Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.  
Copyright 1991, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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