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TL1591CPSLE PDF预览

TL1591CPSLE

更新时间: 2024-11-21 12:21:43
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
11页 226K
描述
SAMPLE-AND-HOLD CIRCUIT FOR CCD IMAGERS

TL1591CPSLE 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.3针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.88
标称采集时间:0.031 µs放大器类型:SAMPLE AND HOLD CIRCUIT
最大下降率:100 V/sJESD-30 代码:R-PDSO-G8
长度:6.2 mm功能数量:1
端子数量:8最高工作温度:80 °C
最低工作温度:-25 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
采样并保持/跟踪并保持:SAMPLE座面最大高度:2 mm
子类别:Sample and Hold Circuit最大压摆率:20 mA
供电电压上限:7 V标称供电电压 (Vsup):5 V
表面贴装:YES温度等级:COMMERCIAL EXTENDED
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5.3 mmBase Number Matches:1

TL1591CPSLE 数据手册

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TL1591  
SAMPLE-AND-HOLD CIRCUIT FOR CCD IMAGERS  
SOCS026B – SEPTEMBER 1989 – REVISED JUNE 1994  
P OR PS PACKAGE  
(TOP VIEW)  
15-MHz Sampling Rate  
30-ns Acquisition Time  
Diode-Bridge Switch  
25-MHz Bandwidth  
ANLG V  
DGTL V  
CC  
1
2
3
4
8
7
6
5
CC  
ANLG IN  
ANLG GND  
ANLG OUT  
DGTL IN  
DGTL GND  
SUB GND  
Low-Voltage Supply  
description  
The TL1591 is a monolithic integrated sample-and-hold circuit that uses the BiFET process with  
Schottky-barrier diodes and is designed for use with CCD area imagers. This device consists of an ultra-fast  
input-bufferamplifier, adigital-controlleddiode-bridgeswitch, andahigh-impedanceoutputbufferamplifier. The  
electronic switch is controlled by an LS-TTL-compatible logic input.  
functional block diagram  
4
ANLG OUT  
2
A1  
A2  
A3  
ANLG IN  
7
DGTL IN  
C1  
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These  
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,  
Method3015;however, precautionsshouldbetakentoavoidapplicationofanyvoltagehigherthanmaximum-ratedvoltagestothese  
high-impedance circuits. During storage or handling, the device leads should be shorted together or the device should be placed in  
conductive foam. In a circuit, unused inputs should always be connected to an appropriate logic voltage level, preferably either V  
Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive  
(ESDS) Devices and Assemblies available from Texas Instruments.  
or ground.  
CC  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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