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TL087IDR PDF预览

TL087IDR

更新时间: 2024-11-04 13:14:43
品牌 Logo 应用领域
德州仪器 - TI 运算放大器输入元件
页数 文件大小 规格书
20页 259K
描述
OP-AMP, 2000uV OFFSET-MAX, 3MHz BAND WIDTH, PDSO8, SOIC-8

TL087IDR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.91
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.02 µA25C 时的最大偏置电流 (IIB):0.0002 µA
最小共模抑制比:80 dB标称共模抑制比:93 dB
频率补偿:YES最大输入失调电压:2000 µV
JESD-30 代码:R-PDSO-G8长度:4.9 mm
低-偏置:YES低-失调:NO
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15 V
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:8 V/us标称压摆率:18 V/us
子类别:Operational Amplifier最大压摆率:2.8 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:3000 kHz
最小电压增益:50000宽度:3.9 mm
Base Number Matches:1

TL087IDR 数据手册

 浏览型号TL087IDR的Datasheet PDF文件第2页浏览型号TL087IDR的Datasheet PDF文件第3页浏览型号TL087IDR的Datasheet PDF文件第4页浏览型号TL087IDR的Datasheet PDF文件第5页浏览型号TL087IDR的Datasheet PDF文件第6页浏览型号TL087IDR的Datasheet PDF文件第7页 
TL087, TL088, TL287, TL288  
JFET-INPUT OPERATIONAL AMPLIFIERS  
SLOS082A – D2484, MARCH 1979 – REVISED JANUARY 1993  
Low Input Offset Voltage . . . 0.5 mV Max  
Low Power Consumption  
Internal Frequency Compensation  
Latch-Up-Free Operation  
High Slew Rate . . . 18 V/µs Typ  
Wide Common-Mode and Differential  
Voltage Ranges  
Low Total Harmonic Distortion  
Low Input Bias and Offset Currents  
0.003% Typ  
High Input Impedance . . . JFET-Input Stage  
description  
These JFET-input operational amplifiers incorporate well-matched high-voltage JFET and bipolar transistors  
in a monolithic integrated circuit. They feature low input offset voltage, high slew rate, low input bias and offset  
currents, and low temperature coefficient of input offset voltage. Offset-voltage adjustment is provided for the  
TL087 and TL088.  
The C-suffix devices are characterized for operation from 0°C to 70°C, and the I-suffix devices are characterized  
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of 55°C to 125°C.  
AVAILABLE OPTIONS  
PACKAGE  
V
max  
IO  
T
A
TYPE  
SMALL OUTLINE  
(D)  
CERAMIC DIP  
(JG)  
PLASTIC DIP  
(P)  
FLAT  
(U)  
AT 25°C  
0°C  
to  
0.5 mV  
1 mV  
TL087CD  
TL088CD  
TL087CJG  
TL088CJG  
TL087CP  
TL088CP  
Single  
Dual  
0.5 mV  
1 mV  
TL287CD  
TL288CD  
TL287CJG  
TL288CJG  
TL287CP  
TL288CP  
70°C  
40°C  
to  
0.5 mV  
1 mV  
TL087ID  
TL088ID  
TL087IJG  
TL088IJG  
TL087IP  
TL088IP  
Single  
Dual  
0.5 mV  
1 mV  
TL287ID  
TL288ID  
TL287IJG  
TL288IJG  
TL287IP  
TL288IP  
85°C  
55°C  
Single  
Dual  
1 mV  
1 mV  
TL088MJG  
TL288MJG  
TL088MU  
TL288MU  
to  
125°C  
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TL087CDR).  
Copyright 1993, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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