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TL084QD PDF预览

TL084QD

更新时间: 2024-11-03 22:23:59
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管输入元件
页数 文件大小 规格书
29页 463K
描述
JFET-INPUT OPERATIONAL AMPLIFIERS

TL084QD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-14针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:0.65
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.05 µA
25C 时的最大偏置电流 (IIB):0.0002 µA最小共模抑制比:70 dB
标称共模抑制比:86 dB频率补偿:YES
最大输入失调电流 (IIO):0.002 µA最大输入失调电压:6000 µV
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:8.65 mm低-偏置:YES
低-失调:NO微功率:NO
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:4
端子数量:14最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP14,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:+-15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:8 V/us
标称压摆率:13 V/us子类别:Operational Amplifier
最大压摆率:2.8 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:3000 kHz
最小电压增益:25000宽带:NO
宽度:3.9 mmBase Number Matches:1

TL084QD 数据手册

 浏览型号TL084QD的Datasheet PDF文件第2页浏览型号TL084QD的Datasheet PDF文件第3页浏览型号TL084QD的Datasheet PDF文件第4页浏览型号TL084QD的Datasheet PDF文件第5页浏览型号TL084QD的Datasheet PDF文件第6页浏览型号TL084QD的Datasheet PDF文件第7页 
TL081, TL081A, TL081B, TL082, TL082A, TL082B  
TL082Y, TL084, TL084A, TL084B, TL084Y  
JFET-INPUT OPERATIONAL AMPLIFIERS  
SLOS081E – FEBRUARY 1977 – REVISED FEBRUARY 1999  
Low Power Consumption  
High Input Impedance . . . JFET-Input Stage  
Latch-Up-Free Operation  
Wide Common-Mode and Differential  
Voltage Ranges  
High Slew Rate . . . 13 V/µs Typ  
Common-Mode Input Voltage Range  
Low Input Bias and Offset Currents  
Output Short-Circuit Protection  
Includes V  
CC+  
Low Total Harmonic  
Distortion . . . 0.003% Typ  
description  
The TL08x JFET-input operational amplifier family is designed to offer a wider selection than any previously  
developed operational amplifier family. Each of these JFET-input operational amplifiers incorporates  
well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature  
high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. Offset  
adjustment and external compensation options are available within the TL08x family.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from 40°C to 85°C. The Q-suffix devices are characterized for operation from 40°C to 125°C.  
The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.  
symbols  
TL081  
TL082 (EACH AMPLIFIER)  
TL084 (EACH AMPLIFIER)  
OFFSET N1  
+
IN+  
IN–  
+
IN+  
IN–  
OUT  
OUT  
OFFSET N2  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1999, Texas Instruments Incorporated  
On products compliant to MIL-PRF-38535, all parameters are tested  
unless otherwise noted. On all other products, production  
processing does not necessarily include testing of all parameters.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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