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TL082CMX/NOPB PDF预览

TL082CMX/NOPB

更新时间: 2024-11-04 21:18:03
品牌 Logo 应用领域
美国国家半导体 - NSC 放大器光电二极管
页数 文件大小 规格书
14页 1095K
描述
IC DUAL OP-AMP, 20000 uV OFFSET-MAX, 4 MHz BAND WIDTH, PDSO8, SOIC-8, Operational Amplifier

TL082CMX/NOPB 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP, SOP8,.25
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.17放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.0004 µA
25C 时的最大偏置电流 (IIB):0.0004 µA最小共模抑制比:70 dB
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电流 (IIO):0.004 µA最大输入失调电压:20000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm低-偏置:YES
低-失调:NO湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:2端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:+-15 V
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:8 V/us标称压摆率:13 V/us
子类别:Operational Amplifier最大压摆率:5.6 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:4000 kHz最小电压增益:15000
宽度:3.9 mmBase Number Matches:1

TL082CMX/NOPB 数据手册

 浏览型号TL082CMX/NOPB的Datasheet PDF文件第2页浏览型号TL082CMX/NOPB的Datasheet PDF文件第3页浏览型号TL082CMX/NOPB的Datasheet PDF文件第4页浏览型号TL082CMX/NOPB的Datasheet PDF文件第5页浏览型号TL082CMX/NOPB的Datasheet PDF文件第6页浏览型号TL082CMX/NOPB的Datasheet PDF文件第7页 
August 2000  
TL082  
Wide Bandwidth Dual JFET Input Operational Amplifier  
General Description  
Features  
n Internally trimmed offset voltage:  
n Low input bias current:  
n Low input noise voltage:  
n Low input noise current:  
n Wide gain bandwidth:  
n High slew rate:  
15 mV  
50 pA  
These devices are low cost, high speed, dual JFET input  
operational amplifiers with an internally trimmed input offset  
voltage (BI-FET II technology). They require low supply  
16nV/ Hz  
current yet maintain a large gain bandwidth product and fast  
slew rate. In addition, well matched high voltage JFET input  
devices provide very low input bias and offset currents. The  
TL082 is pin compatible with the standard LM1558 allowing  
designers to immediately upgrade the overall performance of  
existing LM1558 and most LM358 designs.  
0.01 pA/ Hz  
4 MHz  
13 V/µs  
3.6 mA  
1012  
0.02%  
50 Hz  
2 µs  
n Low supply current:  
n High input impedance:  
n Low total harmonic distortion:  
n Low 1/f noise corner:  
n Fast settling time to 0.01%:  
These amplifiers may be used in applications such as high  
speed integrators, fast D/A converters, sample and hold  
circuits and many other circuits requiring low input offset  
voltage, low input bias current, high input impedance, high  
slew rate and wide bandwidth. The devices also exhibit low  
noise and offset voltage drift.  
Typical Connection  
Connection Diagram  
DIP/SO Package (Top View)  
00835703  
00835701  
Order Number TL082CM or TL082CP  
See NS Package Number M08A or N08E  
Simplified Schematic  
00835702  
BI-FET II is a trademark of National Semiconductor Corp.  
© 2004 National Semiconductor Corporation  
DS008357  
www.national.com  

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