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TL081ACJG PDF预览

TL081ACJG

更新时间: 2024-11-13 04:28:15
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路输入元件
页数 文件大小 规格书
37页 863K
描述
JFET-INPUT OPERATIONAL AMPLIFIERS

TL081ACJG 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:CERAMIC, DIP-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.8
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.007 µA标称共模抑制比:86 dB
频率补偿:YES最大输入失调电压:7500 µV
JESD-30 代码:R-GDIP-T8长度:9.58 mm
低-偏置:YES低-失调:NO
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:CERAMIC, GLASS-SEALED封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-15 V认证状态:Not Qualified
座面最大高度:5.08 mm标称压摆率:13 V/us
子类别:Operational Amplifier供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:3000 kHz宽度:7.62 mm
Base Number Matches:1

TL081ACJG 数据手册

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ꢀ ꢁꢂ ꢃ ꢉ ꢅ ꢀ ꢁꢂ ꢃ ꢉ ꢆ ꢅ ꢀꢁ ꢂꢃ ꢉꢇ  
ꢌꢀꢍꢎ ꢏꢐꢑꢀ ꢒ ꢐꢌꢓ ꢆꢀ ꢎꢒ ꢏꢆꢁ ꢆꢔ ꢐ ꢁꢎ ꢋꢎ ꢌꢓ ꢕ  
SLOS081G − FEBRUARY 1977 − REVISED SEPTEMBER 2004  
D
D
D
D
D
Low Power Consumption  
D
D
D
D
High Input Impedance . . . JFET-Input Stage  
Latch-Up-Free Operation  
Wide Common-Mode and Differential  
Voltage Ranges  
High Slew Rate . . . 13 V/µs Typ  
Common-Mode Input Voltage Range  
Low Input Bias and Offset Currents  
Output Short-Circuit Protection  
Includes V  
CC+  
Low Total Harmonic  
Distortion . . . 0.003% Typ  
description/ordering information  
The TL08x JFET-input operational amplifier family is designed to offer a wider selection than any previously  
developed operational amplifier family. Each of these JFET-input operational amplifiers incorporates  
well-matched, high-voltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature  
high slew rates, low input bias and offset currents, and low offset-voltage temperature coefficient. Offset  
adjustment and external compensation options are available within the TL08x family.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from 40°C to 85°C. The Q-suffix devices are characterized for operation from 40°C to 125°C.  
The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.  
ORDERING INFORMATION  
V
max  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
IO  
PACKAGE  
T
J
AT 255C  
Tube of 50  
TL081CP  
TL081CP  
PDIP (P)  
PDIP (N)  
Tube of 50  
TL082CP  
TL082CP  
TL084CN  
Tube of 25  
TL084CN  
Tube of 75  
TL081CD  
TL081C  
TL082C  
TL084C  
Reel of 2500  
Tube of 75  
TL081CDR  
TL082CD  
SOIC (D)  
Reel of 2500  
Tube of 50  
TL082CDR  
TL084CD  
0°C to 70°C  
15 mV  
Reel of 2500  
Reel of 2000  
Reel of 2000  
Reel of 2000  
Tube of 150  
Reel of 2000  
Tube of 90  
TL084CDR  
TL081CPSR  
TL082CPSR  
TL084CNSR  
TL082CPW  
TL082CPWR  
TL084CPW  
TL084CPWR  
T081  
T082  
TL084  
SOP (PS)  
SOP (NS)  
T082  
T084  
TSSOP (PW)  
Reel of 2000  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at  
www.ti.com/sc/package.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2004, Texas Instruments Incorporated  
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ꢟ ꢣ ꢠ ꢟꢘ ꢙꢭ ꢛꢚ ꢞ ꢦꢦ ꢤꢞ ꢜ ꢞ ꢝ ꢣ ꢟ ꢣ ꢜ ꢠ ꢨ  
ꢢ ꢙꢦ ꢣꢠꢠ ꢛ ꢟꢩꢣ ꢜ ꢫꢘ ꢠꢣ ꢙ ꢛꢟꢣ ꢧꢨ ꢒ ꢙ ꢞꢦ ꢦ ꢛ ꢟꢩꢣ ꢜ ꢤꢜ ꢛ ꢧꢢꢡ ꢟꢠ ꢅ ꢤꢜ ꢛ ꢧꢢꢡ ꢟꢘꢛ ꢙ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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