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TL080IDR PDF预览

TL080IDR

更新时间: 2024-11-20 17:14:51
品牌 Logo 应用领域
德州仪器 - TI 放大器光电二极管
页数 文件大小 规格书
13页 259K
描述
OP-AMP, 9000uV OFFSET-MAX, 3MHz BAND WIDTH, PDSO8, SO-8

TL080IDR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SO-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.87放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.02 µA
25C 时的最大偏置电流 (IIB):0.0002 µA标称共模抑制比:86 dB
频率补偿:NO最大输入失调电压:9000 µV
JESD-30 代码:R-PDSO-G8长度:4.9 mm
低-偏置:YES低-失调:NO
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TAPE AND REEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:+-15 V认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:8 V/us
标称压摆率:13 V/us子类别:Operational Amplifier
最大压摆率:2.8 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:3000 kHz最小电压增益:25000
宽度:3.9 mmBase Number Matches:1

TL080IDR 数据手册

 浏览型号TL080IDR的Datasheet PDF文件第2页浏览型号TL080IDR的Datasheet PDF文件第3页浏览型号TL080IDR的Datasheet PDF文件第4页浏览型号TL080IDR的Datasheet PDF文件第5页浏览型号TL080IDR的Datasheet PDF文件第6页浏览型号TL080IDR的Datasheet PDF文件第7页 
TL080  
JFET-INPUT OPERATIONAL AMPLIFIER  
SLOS368 − JUNE 2001  
P PACKAGE  
(TOP VIEW)  
D
D
D
D
D
Low Power Consumption  
Wide Common-Mode and Differential  
Voltage Ranges  
N1/COMP  
IN−  
COMP  
VCC+  
OUT  
1
2
3
4
8
7
6
5
Low Input Bias and Offset Currents  
Output Short-Circuit Protection  
IN+  
VCC  
OFFSET N2  
Low Total Harmonic  
Distortion . . . 0.003% Typ  
D
High Input Impedance . . . JFET Input Stage  
D
External Frequency Compensation  
Common-Mode Input Voltage Range  
D
Includes V  
CC+  
D
D
Latch-Up-Free Operation  
High Slew Rate . . . 13 V/µs Typ  
description  
The TL080 JFET-input operational amplifier incorporates well-matched, high-voltage JFET and bipolar  
transistors in an integrated circuit. This device features high slew rates, low input bias and offset currents, and  
a low offset-voltage temperature coefficient. Offset adjustment and external-compensation options are  
available.  
The TL080C is characterized for operation from 0°C to 70°C.  
AVAILABLE OPTIONS  
PACKAGE  
V
max  
PLASTIC  
DIP  
IO  
T
A
AT 25°C  
(P)  
0°C to 70°C  
10 mV  
TL080CP  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443  

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