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TL074IDG4 PDF预览

TL074IDG4

更新时间: 2024-11-23 04:28:15
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管输入元件
页数 文件大小 规格书
41页 1100K
描述
LOW-NOISE JFET-INPUT OPERATIONAL AMPLIFIERS

TL074IDG4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOIC-14针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:1.4放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.02 µA
25C 时的最大偏置电流 (IIB):0.0002 µA最小共模抑制比:70 dB
标称共模抑制比:100 dB频率补偿:YES
最大输入失调电流 (IIO):0.002 µA最大输入失调电压:6000 µV
JESD-30 代码:R-PDSO-G14JESD-609代码:e4
长度:8.65 mm低-偏置:YES
低-失调:NO微功率:NO
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:4
端子数量:14最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:TUBE峰值回流温度(摄氏度):260
功率:NO电源:+-15 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.75 mm最小摆率:8 V/us
标称压摆率:13 V/us子类别:Operational Amplifier
最大压摆率:2.5 mA供电电压上限:18 V
标称供电电压 (Vsup):15 V表面贴装:YES
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:3000 kHz
最小电压增益:25000宽带:NO
宽度:3.9 mmBase Number Matches:1

TL074IDG4 数据手册

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SLOS080J − SEPTEMBER 1978 − REVISED MARCH 2005  
D
D
D
D
D
Low Power Consumption  
D
Low Noise  
V = 18 nV/Hz Typ at f = 1 kHz  
n
Wide Common-Mode and Differential  
Voltage Ranges  
D
D
D
D
D
High Input Impedance . . . JFET Input Stage  
Low Input Bias and Offset Currents  
Output Short-Circuit Protection  
Internal Frequency Compensation  
Latch-Up-Free Operation  
Low Total Harmonic Distortion  
. . . 0.003% Typ  
High Slew Rate . . . 13 V/µs Typ  
Common-Mode Input Voltage Range  
Includes V  
CC+  
description/ordering information  
The JFET-input operational amplifiers in the TL07x series are similar to the TL08x series, with low input bias  
and offset currents and fast slew rate. The low harmonic distortion and low noise make the TL07x series ideally  
suited for high-fidelity and audio preamplifier applications. Each amplifier features JFET inputs (for high input  
impedance) coupled with bipolar output stages integrated on a single monolithic chip.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from −40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of −55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2005, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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