品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | 运算放大器 | |
页数 | 文件大小 | 规格书 |
9页 | 107K | |
描述 | ||
LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER |
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DIP |
包装说明: | ROHS COMPLIANT, PLASTIC, DIP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.58 |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.007 µA | 25C 时的最大偏置电流 (IIB): | 0.0002 µA |
标称共模抑制比: | 86 dB | 频率补偿: | YES |
最大输入失调电流 (IIO): | 0.003 µA | 最大输入失调电压: | 7500 µV |
JESD-30 代码: | R-PDIP-T8 | JESD-609代码: | e3 |
长度: | 9.27 mm | 低-偏置: | YES |
低-失调: | NO | 负供电电压上限: | -18 V |
标称负供电电压 (Vsup): | -15 V | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 105 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | +-15 V |
认证状态: | Not Qualified | 座面最大高度: | 5.33 mm |
最小摆率: | 1.5 V/us | 标称压摆率: | 3.5 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 0.25 mA |
供电电压上限: | 18 V | 标称供电电压 (Vsup): | 15 V |
表面贴装: | NO | 技术: | BIPOLAR |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 1000 kHz | 最小电压增益: | 4000 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
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