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TL034ACDE4 PDF预览

TL034ACDE4

更新时间： 2024-09-23 03:59:39
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
68页 1471K
描述
ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS

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中文翻译

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TL034ACDE4 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：GREEN, PLASTIC, MS-012AB, SOIC-14针数：14
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.23
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.0004 µA
25C 时的最大偏置电流 (IIB)：0.0002 µA最小共模抑制比：75 dB
标称共模抑制比：87 dB频率补偿：YES
最大输入失调电压：5700 µVJESD-30 代码：R-PDSO-G14
JESD-609代码：e4长度：8.65 mm
低-偏置：YES低-失调：NO
微功率：YES湿度敏感等级：1
负供电电压上限：-18 V标称负供电电压 (Vsup)：-5 V
功能数量：4端子数量：14
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP14,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TUBE
峰值回流温度（摄氏度）：260电源：+-5/+-15 V
认证状态：Not Qualified座面最大高度：1.75 mm
最小摆率：1.5 V/us标称压摆率：2.2 V/us
子类别：Operational Amplifier最大压摆率：1.12 mA
供电电压上限：18 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：BIFET
温度等级：COMMERCIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：1000 kHz最小电压增益：5000
宽度：3.9 mmBase Number Matches：1

TL034ACDE4 数据手册

 浏览型号TL034ACDE4的Datasheet PDF文件第2页浏览型号TL034ACDE4的Datasheet PDF文件第3页浏览型号TL034ACDE4的Datasheet PDF文件第4页浏览型号TL034ACDE4的Datasheet PDF文件第5页浏览型号TL034ACDE4的Datasheet PDF文件第6页浏览型号TL034ACDE4的Datasheet PDF文件第7页 
TL03x, TL03xA  
ENHANCED-JFET LOW-POWER LOW-OFFSET  
OPERATIONAL AMPLIFIERS  
SLOS180C – FEBRUARY 1997 – REVISED DECEMBER 2001  
Direct Upgrades for the TL06x Low-Power  
BiFETs  
Higher Slew Rate and Bandwidth Without  
Increased Power Consumption  
Low Power Consumption . . .  
6.5 mW/Channel Typ  
Available in TSSOP for Small Form-Factor  
Designs  
On-Chip Offset-Voltage Trimming for  
Improved DC Performance  
(1.5 mV, TL031A)  
description  
The TL03x series of JFET-input operational amplifiers offer improved dc and ac characteristics over the TL06x  
family of low-power BiFET operational amplifiers. On-chip zener trimming of offset voltage yields precision  
grades as low as 1.5 mV (TL031A) for greater accuracy in dc-coupled applications. The Texas Instruments  
improved BiFET process and optimized designs also yield improved bandwidths and slew rates without  
increased power consumption. The TL03x devices are pin-compatible with the TL06x and can be used to  
upgrade existing circuits or for optimal performance in new designs.  
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors without  
sacrificing the output drive associated with bipolar amplifiers. This higher input impedance makes the TL3x  
amplifiers better suited for interfacing with high-impedance sensors or very low-level ac signals. These devices  
also feature inherently better ac response than bipolar or CMOS devices having comparable power  
consumption.  
The TL03x family has been optimized for micropower operation, while improving on the performance of the  
TL06x series. Designers requiring significantly faster ac response should consider the Excalibur TLE206x  
family of low-power BiFET operational amplifiers.  
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to  
observe common-mode input-voltage limits and output swing when operating from a single supply. DC biasing  
of the input signal is required, and loads should be terminated to a virtual-ground node at midsupply. The TI  
TLE2426 integrated virtual-ground generator is useful when operating BiFET amplifiers from single supplies.  
The TL03x devices are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply  
systems, the TI LinCMOS families of operational amplifiers (TLC prefix) are recommended. When moving from  
BiFET to CMOS amplifiers, particular attention should be paid to slew rate, bandwidth requirements, and output  
loading.  
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized  
for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military  
temperature range of –55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Excalibur is a trademark of Texas Instruments.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...68

中文翻译

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TL034ACDE4 替代型号

型号 品牌 替代类型 描述 数据表
TL034CDR TI

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 ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS
TL034CD TI

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 ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS
TL034ID TI

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 ENHANCED-JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS

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TL034ACDR TI

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TL034ACDR ROCHESTER

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TL034ACDRE4 TI

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TL034ACDRG4 TI

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TL034ACN TI

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TL034ACN ROCHESTER

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 		QUAD OP-AMP, 5700uV OFFSET-MAX, 1MHz BAND WIDTH, PDIP14, ROHS COMPLIANT, PLASTIC, MS-001AA
TL034ACNE4 TI

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TL034AID TI

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TL034AID ROCHESTER

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 		QUAD OP-AMP, 6800uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO14, GREEN, PLASTIC, MS-012AB, SOIC-14

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