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TK8P25DA

更新时间： 2024-11-21 14:56:35

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TK8P25DA 数据手册

TK8P25DA

MOSFETs Silicon N-Channel MOS (π-MOS)

TK8P25DA

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)

(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

3. Packaging and Internal Circuit

DPAK

1: Gate

2: Drain (Heatsink)

3: Source

Start of commercial production

2011-03

2015-08-03

Rev.4.0

12 3 4 5 6 7...10

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