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TK8P25DA PDF预览

TK8P25DA

更新时间: 2024-11-06 14:56:35
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 268K
描述
N-ch MOSFET, 250 V, 0.5 Ω@10V, DPAK, π-MOSⅦ

TK8P25DA 数据手册

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TK8P25DA  
MOSFETs Silicon N-Channel MOS (π-MOS)  
TK8P25DA  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.41 (typ.)  
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)  
(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)  
3. Packaging and Internal Circuit  
DPAK  
1: Gate  
2: Drain (Heatsink)  
3: Source  
Start of commercial production  
2011-03  
©2015 Toshiba Corporation  
2015-08-03  
Rev.4.0  
1

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