是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SC-67 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
雪崩能效等级(Eas): | 165 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 8 A | 最大漏极电流 (ID): | 8 A |
最大漏源导通电阻: | 0.85 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 40 W |
最大脉冲漏极电流 (IDM): | 32 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TK8A50D(STA4,Q,M) | TOSHIBA |
获取价格 |
MOSFET N-CH 500V 8A SC-67 | |
TK8A50DA | TOSHIBA |
获取价格 |
TRANSISTOR 7.5 A, 500 V, 1.04 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, | |
TK8A55DA | TOSHIBA |
获取价格 |
TRANSISTOR 7.5 A, 550 V, 1.07 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, | |
TK8A60W | NXP |
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MOSFETs Silicon N-Channel MOS (DTMOS) | |
TK8A60W | TOSHIBA |
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N-ch MOSFET, 600 V, 0.5 Ω@10V, TO-220SIS, DTM | |
TK8A60W5 | TOSHIBA |
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N-ch MOSFET, 600 V, 0.54 Ω@10V, TO-220SIS, DT | |
TK8A65D | TOSHIBA |
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Switching Regulator Applications | |
TK8A65W | TOSHIBA |
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N-ch MOSFET, 650 V, 0.65 Ω@10V, TO-220SIS, DT | |
TK8B50D | TOSHIBA |
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TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10R1B, SC | |
TK8P25DA | FREESCALE |
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MOSFETs Silicon N-Channel MOS (Ï-MOSî²) |