Datasheet > TK7S10N1Z

TK7S10N1Z

更新时间： 2024-01-16 19:49:37

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	271K
描述
N-ch MOSFET, 100 V, 7.0 A, 0.048 Ω@10V, DPAK+

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TK7S10N1Z 数据手册

TK7S10N1Z

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK7S10N1Z

1. Applications

•

Automotive

Switching Voltage Regulators

Motor Drivers

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK+

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

100

±20

(Note 1)

(Note 2)

(Note 3)

IDP

(Tc = 25)

Single-pulse avalanche energy

Single-pulse avalanche current

Turn-off dVDS/dt ruggedness

EAS

19.6

IAS

dVDS/dt

8.4

V/ns

Channel temperature

Storage temperature

(Note 4)

Tch

175



Tstg

-55 to 175

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2014-01

Toshiba Electronic Devices & Storage Corporation

2020-06-24

Rev.6.0

12 3 4 5 6 7...9

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