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TK7S10N1Z PDF预览

TK7S10N1Z

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 271K
描述
N-ch MOSFET, 100 V, 7.0 A, 0.048 Ω@10V, DPAK+

TK7S10N1Z 数据手册

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TK7S10N1Z  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TK7S10N1Z  
1. Applications  
Automotive  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) AEC-Q101 qualified  
(2) Low drain-source on-resistance: RDS(ON) = 40 m(typ.) (VGS = 10 V)  
(3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)  
(4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (heatsink)  
3: Source  
DPAK+  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
100  
±20  
7
(Note 1)  
(Note 1)  
(Note 2)  
(Note 3)  
A
IDP  
21  
(Tc = 25)  
PD  
50  
W
mJ  
A
Single-pulse avalanche energy  
Single-pulse avalanche current  
Turn-off dVDS/dt ruggedness  
EAS  
19.6  
7
IAS  
dVDS/dt  
8.4  
V/ns  
Channel temperature  
Storage temperature  
(Note 4)  
(Note 4)  
Tch  
175  
Tstg  
-55 to 175  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2014-01  
©2020  
Toshiba Electronic Devices & Storage Corporation  
2020-06-24  
Rev.6.0  
1

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