TK72A08N1
MOSFETs Silicon N-channel MOS (U-MOS-H)
TK72A08N1
1. Applications
•
Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
V
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulsed)
Power dissipation
VDSS
VGSS
ID
80
±20
(Silicon limit)
(Tc = 25)
(t = 1 ms)
(Note 1), (Note 2)
(Note 1)
157
A
ID
72
(Note 1)
IDP
339
(Tc = 25)
PD
45
W
mJ
A
Single-pulse avalanche energy
Avalanche current
(Note 3)
EAS
IAR
161
72
Channel temperature
Storage temperature
Tch
Tstg
150
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2012-05
2014-02-14
Rev.3.0
1