Datasheet > TK65S04N1L

TK65S04N1L

更新时间： 2024-11-06 14:58:07

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TK65S04N1L 数据手册

TK65S04N1L

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK65S04N1L

1. Applications

•

Automotive

Motor Drivers

Switching Voltage Regulators

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (heatsink)

3: Source

DPAK+

Start of commercial production

2014-04

2020-06-24

Rev.8.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...10

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