Datasheet > TK65G10N1

TK65G10N1

更新时间： 2024-11-20 14:56:15

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TK65G10N1 数据手册

TK65G10N1

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK65G10N1

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)

(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

D2PAK

Start of commercial production

2013-08

2014-06-30

Rev.4.0

12 3 4 5 6 7...9

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