5秒后页面跳转
TK65G10N1 PDF预览

TK65G10N1

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 265K
描述
EOL announced

TK65G10N1 数据手册

 浏览型号TK65G10N1的Datasheet PDF文件第2页浏览型号TK65G10N1的Datasheet PDF文件第3页浏览型号TK65G10N1的Datasheet PDF文件第4页浏览型号TK65G10N1的Datasheet PDF文件第5页浏览型号TK65G10N1的Datasheet PDF文件第6页浏览型号TK65G10N1的Datasheet PDF文件第7页 
TK65G10N1  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TK65G10N1  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 3.8 m(typ.) (VGS = 10 V)  
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)  
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain  
3: Source  
D2PAK  
Start of commercial production  
2013-08  
2014-06-30  
Rev.4.0  
1

与TK65G10N1相关器件

型号 品牌 获取价格 描述 数据表
TK65S04K3L TOSHIBA

获取价格

Switching Voltage Regulators
TK65S04N1L TOSHIBA

获取价格

N-ch MOSFET, 40 V, 65 A, 0.0043 Ω@10V, DPAK+
TK66112110J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TK66112130J0G AMPHENOL

获取价格

Barrier Strip Terminal Block,
TK66116130J0G AMPHENOL

获取价格

Barrier Strip Terminal Block,
TK66120120J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TK66122110J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TK66122130J0G AMPHENOL

获取价格

Barrier Strip Terminal Block,
TK66124100J0G AMPHENOL

获取价格

Barrier Strip Terminal Block
TK66124110J0G AMPHENOL

获取价格

Barrier Strip Terminal Block