Datasheet > TK4K1A60F

TK4K1A60F

更新时间： 2024-09-27 14:57:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	457K
描述
N-ch MOSFET, 600 V, 4.1 Ω@10V, TO-220SIS, π-MOSⅨ

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TK4K1A60F 数据手册

TK4K1A60F

MOSFETs Silicon N-Channel MOS (π-MOS)

TK4K1A60F

1. Applications

•

Switching Power Supplies

2. Features

(1) Easy to control Gate switching

(2) Low drain-source on-resistance: RDS(ON) = 3.38 Ω (typ.)

(3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.19 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

TO-220SIS

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

600

±30

(Note 1)

IDP

(Tc = 25 )

Single-pulse avalanche energy

Single-pulse avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 2)

EAS

IAS

(Note 1)

IDR

IDRP

Tch

150



Storage temperature

Tstg

-55 to 150

2000

0.6

Isolation voltage (RMS)

Mounting torque

(t = 1.0 s)

VISO(RMS)

TOR

Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2018-09

Toshiba Electronic Devices & Storage Corporation

2018-09-25

Rev.2.0

12 3 4 5 6 7...10

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