Datasheet > TK4A65DA

TK4A65DA

更新时间： 2024-11-06 14:58:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	205K
描述
N-ch MOSFET, 650 V, 1.9 Ω@10V, TO-220SIS, π-MOSⅦ

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中文翻译

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技术参数
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TK4A65DA 技术参数

生命周期：	Active	零件包装代码：	SC-67
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.73
雪崩能效等级（Eas）：	205 mJ	外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	650 V
最大漏极电流 (ID)：	3.5 A	最大漏源导通电阻：	1.9 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	14 A
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

TK4A65DA 数据手册

TK4A65DA

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

TK4A65DA

Switching Regulator Applications

Unit: mm

2.7 ± 0.2

10 ± 0.3

Ф3.2 ± 0.2

•

Low drain-source ON-resistance: R

High forward transfer admittance: |Y | = 1.9 S (typ.)

= 1.6 Ω(typ.)

DS (ON)

Low leakage current: I

= 10 μA(max) (V

= 650 V)

DSS

Enhancement mode: V = 2.4 to 4.4 V (V

= 10 V, I = 1 mA)

1.14 ± 0.15

0.69 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

M A

Ф0.2

2.54

Characteristics

Drain-source voltage

Symbol

Rating

Unit

650

±30

3.5

DSS

Gate-source voltage

GSS

(Note 1)

1: Gate

2: Drain

3: Source

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

JEDEC

JEITA

⎯

Single pulse avalanche energy

205

SC-67

2-10U1B

(Note 2)

Avalanche current

3.5

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.7 g (typ.)

150

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.57

62.5

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150℃.

Note 2: = 90 V, T = 25°C(initial), L = 29.6 mH, R = 25 Ω, I = 3.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Start of commercial production

2009-09

2013-11-01

12 3 4 5 6

中文翻译

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与TK4A65DA相关器件

型号	品牌	获取价格	描述	数据表
TK4A80E	TOSHIBA	获取价格	N-ch MOSFET, 800 V, 3.5 Ω@10V, TO-220SIS, π-M
TK4K1A60F	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 4.1 Ω@10V, TO-220SIS, π-M
TK4P50D	FREESCALE	获取价格	Silicon N Channel MOS Type (Ï-MOSâ¦)
TK4P50D	TOSHIBA	获取价格	N-ch MOSFET, 500 V, 2.0 Ω@10V, DPAK, π-MOSⅦ
TK4P55D	FREESCALE	获取价格	Silicon N Channel MOS Type (Ï-MOSâ¦)
TK4P55D	TOSHIBA	获取价格	Switching Regulator Applications
TK4P55DA	FREESCALE	获取价格	Silicon N Channel MOS Type (Ï-MOSâ¦)
TK4P55DA	TOSHIBA	获取价格	Switching Regulator Applications
TK4P60D	FREESCALE	获取价格	MOSFETs Silicon N-Channel MOS (Ï-MOSî²)
TK4P60D	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 1.7 Ω@10V, DPAK, π-MOSⅦ

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