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TK33S10N1H PDF预览

TK33S10N1H

更新时间: 2024-11-24 14:56:15
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
9页 264K
描述
N-ch MOSFET, 100 V, 0.0097 Ω@10V, DPAK+, U-MOSⅧ-H

TK33S10N1H 数据手册

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TK33S10N1H  
MOSFETs Silicon N-channel MOS (U-MOS-H)  
TK33S10N1H  
1. Applications  
Switching Voltage Regulators  
Motor Drivers  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 8.2 m(typ.) (VGS = 10 V)  
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)  
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (heatsink)  
3: Source  
DPAK+  
4. Absolute Maximum Ratings (Note) (Ta = 25unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
100  
±20  
33  
(Note 1)  
(Note 1)  
A
IDP  
99  
(Tc = 25)  
PD  
125  
66.5  
33  
W
mJ  
A
Single-pulse avalanche energy  
Single-pulse avalanche current  
Channel temperature  
(Note 2)  
(Note 2)  
EAS  
IAS  
Tch  
175  
Storage temperature  
Tstg  
-55 to 175  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2014-02  
©2016 Toshiba Corporation  
2016-03-07  
Rev.1.0  
1

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