Datasheet > TK290P65Y

TK290P65Y

更新时间： 2024-11-21 14:58:03

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	451K
描述
N-ch MOSFET, 650 V, 0.29 Ω@10V, DPAK, DTMOSⅤ

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TK290P65Y 数据手册

TK290P65Y

MOSFETs Silicon N-Channel MOS (DTMOS)

TK290P65Y

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.23 Ω (typ.) by using Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.45 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain

3: Source

DPAK

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

650

±30

(Tc = 25 )

(Tc = 100 )

(Tc = 25 )

(Note 1)

11.5

7.3

IDP

100

Single-pulse avalanche energy

Single-pulse avalanche current

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 2)

EAS

IAS

106

(Note 1)

IDR

IDRP

Tch

Tstg

11.5

150



Storage temperature

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2016-12

2016-11-15

Rev.2.0

12 3 4 5 6 7...10

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