Datasheet > TK25V60X

TK25V60X

更新时间： 2024-11-21 14:56:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	238K
描述
N-ch MOSFET, 600 V, 0.135 Ω@10V, DFN 8 x 8, DTMOSⅣ-H

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TK25V60X 数据手册

TK25V60X

MOSFETs Silicon N-Channel MOS (DTMOS-H)

TK25V60X

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) High-speed switching properties with lower capacitance.

(3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA)

3. Packaging and Internal Circuit

1: Gate

2: Source1

3,4: Source2

5: Drain (Heatsink)

Notice:

Please use the source1 pin for

gate input signal return. Make

sure that the main current flows

into the source2 pins.

DFN8x8

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

600

±30

(Note 1)

IDP

100

(Tc = 25)

180

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

306

6.2

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 1)

IDR

IDRP

Tch

100

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2014-06

2014-05-12

Rev.2.0

12 3 4 5 6 7...10

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