Datasheet > TK25E60X5

TK25E60X5

更新时间： 2022-02-26 12:54:15

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	338K
描述
isc N-Channel MOSFET Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

TK25E60X5 数据手册

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

TK25E60X，ITK25E60X

·FEATURES

·Low drain-source on-resistance:

RDS(on) ≤0.125Ω.

·Enhancement mode:

Vth =2.5 to 3.5V (VDS = 10 V, ID=1.2mA)

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

·DESCRITION

·Switching Voltage Regulators

·ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Drain Current-Continuous

Drain Current-Single Pulsed

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

I_DM

100

P_D

180

℃

150

T_j

-55~150

T_stg

·THERMAL CHARACTERISTICS

SYMBOL

Rth(ch-c)

Rth(ch-a)

PARAMETER

MAX

UNIT

℃/W

Channel-to-case thermal resistance

0.694

83.3

Channel-to-ambient thermal resistance

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

下载PDF

与TK25E60X5相关器件

型号	品牌	描述	获取价格	数据表
TK25N60X	TOSHIBA	N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-247, DTMO	获取价格
TK25N60X5	TOSHIBA	N-ch MOSFET, 600 V, 0.14 Ω@10V, TO-247, DTMOS	获取价格
TK25S06N1L	TOSHIBA	N-ch MOSFET, 60 V, 25 A, 0.0185 Ω@10V, DPAK+	获取价格
TK25V60X	TOSHIBA	N-ch MOSFET, 600 V, 0.135 Ω@10V, DFN 8 x 8, D	获取价格
TK25V60X5	TOSHIBA	N-ch MOSFET, 600 V, 0.15 Ω@10V, DFN 8 x 8, DT	获取价格
TK25Z60X	TOSHIBA	N-ch MOSFET, 600 V, 0.125 Ω@10V, TO-247-4L, D	获取价格