Datasheet > TK20D60T

TK20D60T

更新时间： 2024-11-11 20:09:39

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网
页数	文件大小	规格书
6页	168K
描述
TRANSISTOR POWER, FET, LEAD FREE, 2-10V1A, 3 PIN, FET General Purpose Power

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TK20D60T 技术参数

生命周期：	Transferred	包装说明：	ROHS COMPLIANT, 2-10V1A, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.32	JESD-30 代码：	R-XSFM-T3
端子数量：	3	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
Base Number Matches：	1

TK20D60T 数据手册

TK20D60T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)

TK20D60T

Switching Regulator Applications

Unit: mm

10.0±0.3

9.5±0.2

0.6±0.1

•

Low drain-source ON resistance: R

= 0.165Ω (typ.)

DS (ON)

Ф3.65±0.2

High forward transfer admittance: ⎪Y_fs⎪=12 S (typ.)

Low leakage current: I = 100 μA (V = 600 V)

DSS

Enhancement mode: V = 3.0 to 5.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1.1±0.15

0.75±0.25

Characteristics

Drain-source voltage

Symbol

Rating

Unit

0.62±0.15

Ф0.2 M

600

±30

DSS

+0.25

0.57

Gate-source voltage

GSS

2.54

-0.10

2.53±0.2

(Note 1)

Drain current

Pulse (t = 1 ms)

(Note 1)

Drain power dissipation (Tc = 25°C)

190

209

Single pulse avalanche energy

(Note 2)

JEDEC

JEITA

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-10V1A

150

Weight : 1.35 g (typ.)

Storage temperature range

-55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

1: Gate

2: Drain (Heat Sink)

3: Source

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.658

°C/W

th (ch-c)

th (ch-a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 0.91 mH, R = 25 Ω, I = 20 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

2009-09-29

12 3 4 5 6

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与TK20D60T相关器件

型号	品牌	获取价格	描述	数据表
TK20D60U	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS
TK20E60U	TOSHIBA	获取价格	Switching Voltage Regulators
TK20E60W	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 0.155 Ω@10V, TO-220, DTMO
TK20E60W5	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 0.175 Ω@10V, TO-220, DTMO
TK20G60W	TOSHIBA	获取价格	N-ch MOSFET, 600 V, 0.155 Ω@10V, D2PAK, DTMOS
TK20H50C	TOSHIBA	获取价格	Switching Regulator Applications
TK20J50D	TOSHIBA	获取价格	Switching Regulator Applications
TK20J50D(F)	TOSHIBA	获取价格	Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN
TK20J60U	TOSHIBA	获取价格	Switching Regulator Applications
TK20J60U(F)	TOSHIBA	获取价格	MOSFET N-CH 600V 20A TO-3PN

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