Datasheet > TK1R5R04PB

TK1R5R04PB

更新时间： 2024-09-18 14:58:27

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	551K
描述
Not Recommended for New Design

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TK1R5R04PB 数据手册

TK1R5R04PB

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK1R5R04PB

1. Applications

•

Automotive

Motor Drivers

Switching Voltage Regulators

DC-DC Converters

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 1.25 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

D2PAK+

Start of commercial production

2015-11

2020-06-24

Rev.6.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...11

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