Datasheet > TK1R4F04PB

TK1R4F04PB

更新时间： 2024-09-27 14:56:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
11页	555K
描述
Not Recommended for New Design

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TK1R4F04PB 数据手册

TK1R4F04PB

MOSFETs Silicon N-channel MOS (U-MOS-H)

TK1R4F04PB

1. Applications

•

Automotive

Switching Voltage Regulators

DC-DC Converters

Motor Drivers

2. Features

(1) AEC-Q101 qualified

(2) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ.) (VGS = 10 V)

(3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

(4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

TO-220SM(W)

Start of commercial production

2015-10

2020-06-24

Rev.8.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
TK1R4S04PB	TOSHIBA	获取价格	N-ch MOSFET, 40 V, 120 A, 0.00135 Ω@10V, DPAK
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