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TK17E80W PDF预览

TK17E80W

更新时间: 2024-10-03 14:57:27
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 418K
描述
N-ch MOSFET, 800 V, 0.29 Ω@10V, TO-220, DTMOSⅣ

TK17E80W 数据手册

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TK17E80W  
MOSFETs Silicon N-Channel MOS (DTMOS)  
TK17E80W  
1. Applications  
Switching Voltage Regulators  
2. Features  
(1) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.)  
by using Super Junction Structure : DTMOS  
(2) Easy to control Gate switching  
(3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85 mA)  
3. Packaging and Internal Circuit  
1: Gate  
2: Drain (Heatsink)  
3: Source  
TO-220  
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)  
Characteristics  
Symbol  
Rating  
Unit  
V
Drain-source voltage  
Gate-source voltage  
Drain current (DC)  
Drain current (pulsed)  
Power dissipation  
VDSS  
VGSS  
ID  
800  
±20  
17  
(Note 1)  
(Note 1)  
A
IDP  
68  
(Tc = 25 )  
PD  
180  
418  
3.4  
W
mJ  
A
Single-pulse avalanche energy  
Single-pulse avalanche current  
Reverse drain current (DC)  
Reverse drain current (pulsed)  
Channel temperature  
(Note 2)  
EAS  
IAS  
(Note 1)  
(Note 1)  
IDR  
17  
IDRP  
Tch  
68  
150  
-55 to 150  
0.6  
Storage temperature  
Tstg  
TOR  
Mounting torque  
Nm  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
©2016 Toshiba Corporation  
2016-02-13  
Rev.2.0  
1

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