Datasheet > TK16E60W5

TK16E60W5

更新时间： 2024-10-03 14:58:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
10页	250K
描述
N-ch MOSFET, 600 V, 0.23 Ω@10V, TO-220, DTMOSⅣ

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TK16E60W5 数据手册

TK16E60W5

MOSFETs Silicon N-Channel MOS (DTMOS)

TK16E60W5

1. Applications

•

Switching Voltage Regulators

2. Features

(1) Fast reverse recovery time: trr = 100 ns (typ.)

(2) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.)

by used to Super Junction Structure : DTMOS

(3) Easy to control Gate switching

(4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.79 mA)

3. Packaging and Internal Circuit

1: Gate

2: Drain (Heatsink)

3: Source

TO-220

4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

VDSS

VGSS

600

±30

(Note 1)

15.8

63.2

130

IDP

(Tc = 25)

Single-pulse avalanche energy

Avalanche current

(Note 2)

EAS

IAR

194

4.0

Reverse drain current (DC)

Reverse drain current (pulsed)

Channel temperature

(Note 1)

IDR

15.8

63.2

150

IDRP

Tch



Storage temperature

Tstg

TOR

-55 to 150

0.6

Mounting torque

Nm

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2013-09

2014-02-25

Rev.2.0

12 3 4 5 6 7...10

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